Transistors IC SMD Type Product specification 2SC4180 Features Small dimension High DC current gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Total power dissipation PT 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 120V, IE=0 Emitter cutoff current IEBO VEB = 5V, IC=0 DC current gain hFE Collector-emitter saturation voltage * Min Typ VCE = 6V , IC = 1mA* 135 600 VCE = 6V , IC = 0.1mA 100 580 VCE(sat) IC = 10mA , IB = 1mA Max Unit 0.05 ìA 0.05 ìA 900 0.07 0.3 V Base-emitter voltage * VBE VCE =6V , IC = 1mA 0.55 0.59 0.65 V Gain bandwidth product fT VCE = 6V , IE = -1mA 50 110 Output capacitance * Pulse test: tp Cob 350 ìs; d VCB = 30V , IE = 0 , f = 1.0MHz 1.6 MHz 2.5 pF 0.02. hFE Classification Marking D15 D16 D17 D18 hFE 135 270 200 400 300 600 450 900 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1