TYSEMI 2SC4499S

Transistors
SMD Type
Product specification
2SC4499S
TO-252
6.50
+0.2
5.30-0.2
+0.15
1.50 -0.15
+0.15
-0.15
Features
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
High speed and high voltage switching
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
10
V
Collector current
ICP
0.5
A
Collector peak current
IC
1
A
0.75
W
10
W
Collector power dissipation
PC
TC=25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
V
10
V
VCEO(sus)
IC = 0.1 A, RBE =
Emitter to base breakdown voltage
V(BR)EBO
IE = 10 mA, IC = 0
ICBO
VCB = 400 V, IE = 0
20
ICEO
VCE = 350 V, RBE =
50
Collector cutoff current
DC current transfer ratio
hFE
,L = 100 mH
VCE = 5 V, IC = 0.25 A*1
12
VCE = 5 V, IC = 0.5 A*1
5
Collector to emitter saturation voltage
VCE(sat)
IC = 0.25 A, IB = 0.05 A*1
Base to emitter saturation voltage
VBE(sat)
Unit
400
Collector to emitter sustain voltage
1.0
ìA
V
IC = 0.25 A, IB = 0.05 A*1
1.5
V
Turn on time
ton
IC = 0.5 A, IB1 = -IB2 = 0.1 A,
1.0
ìs
Storage time
tstg
VCC= 150 V
2
ìs
1.0
ìs
Fall time
tf
* 1 Pulse test.
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