Transistors SMD Type Product specification 2SD1367 Features Low frequency power amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6 V IC 2 A Peak collector current ICP *1 3 A Collector power dissipation PC *2 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector current *1. PW 10 ms; d 0.02. *2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = 10 ìA, IE = 0 20 V Collector to emitter breakdown voltage V(BR)CEO IC = 1 mA, RBE = 16 V Emitter to base breakdown voltage V(BR)EBO IE = 10 ìA, IC = 0 6 V Collector cutoff current ICBO VCB = 16 V, IE = 0 0.1 ìA Emitter cutoff current IEBO VEB = 5 V, IC = 0 0.1 ìA hFE VCE = 2 V,IC = 0.1 A DC current transfer ratio 100 500 Collector to emitter saturation voltage VCE(sat) IC = 1 A,IB = 0.1 A 0.15 0.3 V Base to emitter saturation voltage VBE(sat) IC = 1 A,IB = 0.1 A 0.9 1.2 V Gain bandwidth product fT Collector output capacitance Cob VCE = 2 V,IC = 10 mA 100 MHz VCB = 10 V, IE = 0,f = 1 MHz 20 pF hFE Classification Marking BA BB BC hFE 100 200 160 320 250 500 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1