Product specification 2SD1366A SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 ■ Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Low frequency power amplifier 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V IC 1 A PC* 1 W Collector current Total power dissipation Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ * Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = 10 μA, IE = 0 30 V Collector to emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 25 V Emitter to base breakdown voltage V(BR)EBO IE = 10 μA, IC = 0 5 V Collector cutoff current ICBO VCB = 250V,IB=0 0.1 μA Emitter cutoff current IEBO VEB = 4 V, IC = 0 0.1 μA DC current gain hFE VCE =2V,Ic=500mA 85 240 Collector to emitter saturation voltage VCE(sat) IC = 0.8 A, IB = 80mA 0.3 V Base to emitter saturation voltage VBE(sat) IC = 0.8 A, IB = 80mA 1 V Transition frequency fT Output Capacitance Cob VCE = 2V ,Ic=500mA 240 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 22 pF ■ hFE Classification Marking AC AD hFE 82～180 120～240 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1