Transistors IC SMD Type Product specification 2SD2318 TO-252 Features High DC current gain. +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low saturation voltage. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V 3 A Collector current IC Collector current (pulse) * ICP Collector power dissipation PC Tc = 25 4.5 A(Pulse)* 4.5 A 1 W 15 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Pw=100ms. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 80 V Collector-emitter breakdown voltage BVCEO IC=1mA 60 V Emitter-base breakdown voltage BVEBO IE=50ìA 6 V Collector cutoff current ICBO VCB=80V 100 ìA Emitter cutoff current IEBO VEB=6V 100 ìA Collector-emitter saturation voltage VCE(sat) IC=2 A, IB=0.05A 1.0 V Base-emitter saturation voltage VBE(sat) IC=2 A, IB=0.05A 1.5 V DC current transfer ratio hFE Output capacitance fT Transition frequency Cob VCE=4V, IC=0.5A 560 1800 VCE=5V, IE= -0.2A, f=10MHz 50 MHz VCB=10V, IE=0A, f=1MHz 60 pF hFE Classification Rank U V hFE 560 1200 820 1800 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1