Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2357 Features Low collector-emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 10 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 5 V Collector current IC 1.2 A Peak collector current ICP 1 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector-base cutoff current ICBO VCB = 7 V, IE = 0 Min Typ Max Unit 1 ìA Collector-base voltage VCBO IC = 10 ìA, IE = 0 10 V Collector-emitter voltage VCEO IC = 1 mA, IB = 0 10 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 5 V Forward current transfer ratio Collector-emitter saturation voltage Transition frequency hFE fT Collector output capacitance VCE = 2 V, IC = 100 mA 200 800 VCE(sat) IC = 500 mA, IB = 5 mA Cob 0.15 V VCB = 5 V, IE = -50 mA, f = 200 MHz 120 MHz VCB = 5 V, IE = 0, f = 1 MHz 30 pF Marking Marking 1M www.kexin.com.cn 1