KEXIN 2SD602

Transistors
IC
SMD Type
Silicon NPN Epitaxial Planar Type
2SD602
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
Mini type package, allowing downsizing of the equipment and
0.55
Low collector to emitter saturation voltage VCE(sat).
2
+0.1
0.95-0.1
+0.1
1.9-0.1
automatic insertion through the tape packing and the magazine
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
packing.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Peak collector current
ICP
1
A
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = 10 ìA, IE = 0
30
V
Collector-emitter voltage
VCEO
IC = 10 mA, IB = 0
25
V
Emitter-base voltage
VEBO
IE = 10 ìA, IC = 0
5
V
Collector-base cutoff current
ICBO
VCB = 20 V, IE = 0
Forward current transfer ratio
hFE
VCE = 10 V, IC = 150 mA
Collector-emitter saturation voltage
VCE(sat) IC = 300 mA, IB = 30 mA
Transition frequency
fT
Collector output capacitance
Cob
VCB = 10 V, IE = -50 mA , f = 200 MHz
VCB = 10V , IE = 0 , f = 1.0MHz
0.1
85
160
340
0.35
0.6
200
6
ìA
V
MHz
15
pF
hFE Classification
Marking
WQ
WR
WS
hFE
85 170
120 240
170 340
www.kexin.com.cn
1