SMD Type Product specification 2SK3112 TO-263 Gate voltage rating +0.1 1.27-0.1 Features 30 V Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Avalanche capability rated Built-in gate protection diode +0.2 2.54-0.2 Surface mount device available +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V) +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 Low input capacitance 5.60 MAX. (VGS = 10 V, ID = 13A) +0.2 8.7-0.2 RDS(on) = 110m Unit: mm 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 200 V Gate to source voltage VGSS 30 V ID 25 A 75 A Drain current Idp * Power dissipation TC=25 100 PD W 1.5 TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Symbol Testconditons IDSS VDS=200V,VGS=0 Min IGSS VGS= 30V,VDS=0 Gate to source cut off voltage VGS(off) VDS=10V,ID=1mA 2.5 Forward transfer admittance Yfs VDS=10V,ID=13A 6.0 RDS(on) VGS=10V,ID=13A Drain to source on-state resistance Typ Max Unit 100 A 10 4.5 A V S 76 110 m Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time tr Turn-off delay time toff 110 ns Fall time tf 70 ns http://www.twtysemi.com 1600 pF 430 pF Crss 280 pF ton 35 ns 140 ns VDS=10V,VGS=0,f=1MHZ ID=13A,VGS(on)=10V,VDD=100V,RG=10 [email protected] 4008-318-123 1 of 1