SMD Type Product specification 2SK3467 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V) Built-in gate protection diode +0.2 2.54-0.2 Surface mount device available +0.2 15.25-0.2 Low gate charge +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 MAX. (VGS = 10 V, ID = 40 A) +0.2 8.7-0.2 RDS(on)1 = 6.0 m 5.60 Low on-state resistance 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS 20 V ID 80 A Idp * 320 A Drain current Power dissipation TC=25 76 PD TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.5 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Symbol Testconditons IDSS VDS=20V,VGS=0 Min Typ Max Unit 10 A IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 Yfs VDS=10V,ID=40A 20 RDS(on)1 VGS=10V,ID=40A 4.8 6.0 m RDS(on)2 VGS=4.5V,ID=40A 6.7 9.5 m 10 Ciss VDS=10V,VGS=0,f=1MHZ 2.5 A V S 2800 pF Output capacitance Coss 1200 pF Reverse transfer capacitance Crss 600 pF Turn-on delay time ton 16 ns 23 ns 74 ns 31 ns 55 nC 9 nC 17 nC Rise time tr Turn-off delay time toff Fall time tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com ID=40A,VGS(on)=10V,RG=10 ,VDD=10V ID =80A, VDD =16V, VGS = 10 V [email protected] 4008-318-123 1 of 1