Transistors IC MOSFET SMD Type Product specification 2SK3109 TO-263 Features 30 V +0.1 1.27-0.1 Gate voltage rating Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Avalanche capability rated +0.1 0.81-0.1 2.54 Built-in gate protection diode +0.2 2.54-0.2 Surface mount device available +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) +0.2 2.54-0.2 Low input capacitance 5.60 MAX. (VGS = 10 V, ID = 5.0 A) +0.2 8.7-0.2 RDS(on) = 0.4 Unit: mm 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS 30 V ID 10 A Idp * 30 A Drain current Power dissipation TC=25 50 PD TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.5 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=200V,VGS=0 Gate leakage current IGSS VGS= 30V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.5 Yfs VDS=10V,ID=5.0A 1.5 RDS(on) VGS=10V,ID=5.0A Gate to source cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Typ Max Unit 100 A 10 4.5 A V S 0.32 Ciss VDS=10V,VGS=0,f=1MHZ 0.4 400 pF Output capacitance Coss 110 pF Reverse transfer capacitance Crss 55 pF Turn-on delay time ton 12 ns Rise time tr 34 ns Turn-off delay time toff 40 ns Fall time tf 20 ns http://www.twtysemi.com ID=5.0A,VGS(on)=10V,VDD=100V,RG=10 [email protected] 4008-318-123 1of 1