IC SMD Type Product specification 2SK3574 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 22nC TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A) Built-in gate protection diode +0.2 2.54-0.2 Surface mount device available +0.2 15.25-0.2 +0.2 8.7-0.2 MAX. (VGS = 10 V, ID = 24A) +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 RDS(on)1 = 13.5m 5.60 Low on-state resistance, 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 30 Gate to source voltage VGSS 20 V ID 48 A Idp * 140 A Drain current Power dissipation TC=25 29 PD V W 1.5 TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Symbol Testconditons IDSS VDS=30V,VGS=0 Min Typ Max Unit 10 A IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 Yfs VDS=10V,ID=42A 7.0 RDS(on)1 VGS=10V,ID=42A 10.1 13.5 m RDS(on)2 VGS=4.5V,ID=15A 15 24 m 10 Ciss VDS=10V,VGS=0,f=1MHZ 2.5 A V S 940 pF Output capacitance Coss 245 pF Reverse transfer capacitance Crss 170 pF Turn-on delay time ton 12 ns Rise time tr 18 ns Turn-off delay time toff 39 ns Fall time ID=24A,VGS(on)=10V,RG=10 ,VDD=15V tf 12 ns Total Gate Charge QG 22 nC Gate to Source Charge QGS 3.8 nC Gate to Drain Charge QGD 7 nC http://www.twtysemi.com VDD = 24V VGS = 10 V ID = 48 A [email protected] 4008-318-123 1 of 1