Transistors MOSFET IC SMD Type Product specification 2SK3405 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 16V, VGS = 10 V) +0.1 0.81-0.1 2.54 Built-in gate protection diode +0.2 2.54-0.2 Surface mount device available +0.2 15.25-0.2 MAX. (VGS = 10 V, ID = 24 A) +0.2 2.54-0.2 RDS(on)1 = 9.0m +0.2 8.7-0.2 Low on-state resistance 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS 20 V ID 48 A Idp * 192 A Drain current Power dissipation TC=25 50 PD TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.5 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=20V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 12.5 Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Typ Max Unit 10 A 10 A 2.5 V Yfs VDS=10V,ID=24A RDS(on)1 VGS=10V,ID=24A 6.5 9.0 m RDS(on)2 VGS=4.5V,ID=24A 9.9 14.0 m Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance S 1800 pF 770 pF Crss 400 pF Turn-on delay time ton 21 ns Rise time tr 13 ns Turn-off delay time toff 64 ns Fall time VDS=10V,VGS=0,f=1MHZ ID=24A,VGS(on)=10V,RG=10 ,VDD=10V tf 25 ns Total Gate Charge QG 34 nC Gate to Source Charge QGS 6.6 nC Gate to Drain Charge QGD 11 nC http://www.twtysemi.com ID =48A, VDD = 16 V, VGS = 10 V [email protected] 4008-318-123 1 of 1