Product specification BAV74 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High switching speed: max.4 ns 0.55 Small plastic SMD package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Continuous reverse voltage: max. 50 V +0.05 0.1-0.01 +0.1 0.97-0.1 Repetitive peak reverse voltage: max. 60 V 0-0.1 +0.1 0.38-0.1 Repetitive peak forward current: max. 450 mA 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Symbol Conditions VRRM VR IF Storage temperature Tstg Junction temperature 60 V 50 V double diode loaded; Note 1 125 450 mA mA prior to surge; s 4 t = 1 ms 1 t=1 IFSM Ptot Unit 215 IFRM Total power dissipation Max single diode loaded; Note 1 square wave;Tj = 25 Non-repetitive peak forward current Min t=1s 0.5 Tamb = 25 ; Note 1 250 -65 A mW +150 Tj 150 thermal resistance from junction to tie-point Rth j-tp 360 K/W thermal resistance from junction to ambient Rth j-a 500 K/W Note 1. Device mounted on an FR4 printed-circuit board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification BAV74 Electrical Characteristics Ta = 25 Param eter Forward voltage Reverse current Sym bol Conditions Max Unit IF = 1 m A 715 mV VF I F = 10 m A 855 mV I F = 100 m A 1.0 V V R = 25 V 30 nA V R = 50 V 0.1 A V R = 25 V; T j = 150 30 A V R = 50 V; T j = 150 100 A 1.5 pF 4 ns 1.75 V IR Diode capacitance Cd Reverse recovery tim e t rr f = 1 MHz; V R = 1 V; when switched from I F =10m A to I R = 10 m A; R L = 100 Reverse recovery tim e V fr ; m easured at I R = 1 m A; when switched from I F =10 m A; t r = 2 0 ns; Marking Marking JAp http://www.twtysemi.com [email protected] 4008-318-123 2 of 2