IC Transistors SMD Type Product specification FMG3A ■ Features Unit: mm ● Dual NPN digital transistor 4 5 1 (3) (2) 2 3 (1) R1=4.7kΩ R1 DTr2 R1 DTr1 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 100 mA Pd 300 mW Tj, TSTG -55 to +150 ℃ Collector current Power dissipation(Total) Operating and Storage and Temperature Range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = 50 μA, IE = 0 50 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1 mA, IB = 0 50 V Emitter-Base Breakdown Voltage V(BR)EBO IC = 50 μA, IC = 0 5 V Collector cutoff current ICBO Emitter cutoff current IEBO VEB= 4V, IC=0 DC current gain hFE VCE=5V, IC=1mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT Input resistance R1 VCB=50V, IE=0 100 250 0.5 μA 0.5 μA 600 0.3 IC = 5 mA; IB = 0.25 mA VCE=10V, IE= -5m A , f=100MHz 250 3.29 4.7 V MHz 6.11 kΩ ■ Marking Marking G3 http://www.twtysemi.com [email protected] 4008-318-123 1of 2 IC Transistors SMD Type Product specification FMG3A 1k VCE=5V DC CURRENT GAIN : hFE 500 200 Ta=100˚C 25˚C −40˚C 100 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current http://www.twtysemi.com [email protected] COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) ■ Typical Characteristics 1 lC/lB=20 500m 200m Ta=100˚C 25˚C −40˚C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current 4008-318-123 2 of 2