TYSEMI FMG3A

IC
Transistors
SMD Type
Product specification
FMG3A
■ Features
Unit: mm
● Dual NPN digital transistor
4
5
1
(3)
(2)
2
3
(1)
R1=4.7kΩ
R1
DTr2
R1
DTr1
(4)
(5)
■ Absolute Maximum Ratings Ta = 25℃
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
IC
100
mA
Pd
300
mW
Tj, TSTG
-55 to +150
℃
Collector current
Power dissipation(Total)
Operating and Storage and Temperature Range
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 50 μA, IE = 0
50
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 1 mA, IB = 0
50
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IC = 50 μA, IC = 0
5
V
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
VEB= 4V, IC=0
DC current gain
hFE
VCE=5V, IC=1mA
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
Input resistance
R1
VCB=50V, IE=0
100
250
0.5
μA
0.5
μA
600
0.3
IC = 5 mA; IB = 0.25 mA
VCE=10V, IE= -5m A , f=100MHz
250
3.29
4.7
V
MHz
6.11
kΩ
■ Marking
Marking
G3
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4008-318-123
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IC
Transistors
SMD Type
Product specification
FMG3A
1k
VCE=5V
DC CURRENT GAIN : hFE
500
200
Ta=100˚C
25˚C
−40˚C
100
50
20
10
5
2
1
100µ 200µ 500µ 1m
2m
5m 10m 20m
50m100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
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COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
■ Typical Characteristics
1
lC/lB=20
500m
200m
Ta=100˚C
25˚C
−40˚C
100m
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m
2m
5m
10m 20m
50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
4008-318-123
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