Transistors Transistors Diodes IC IC SMDType Type SMD Product specification FMW3 ■ Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=50mA 1 FMW3 2 3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5.0 V Collector Current -Continuous IC 50 mA Collector Power Dissipation(TOTAL) PC 300 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-to-base breakdown voltage V(BR)CBO Ic= 50μA, I E=0 120 V Collector-to-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 120 V Emitter-to-base breakdown voltage V(BR)EBO IE= 50 μA， IC=0 5.0 V Collector cutoff current IcBO VCB= 100 V , IE=0 0.5 μA Collector cutoff current IEBO VCE= 4.0V , IC=0 0.5 μA DC current gain hFE Collector-emitter saturation voltage Transition frequency VCE= 60V, IC= 2.0mA 180 820 VCE(sat) IC=10 mA, IB= 1.0mA fT VCE= 12V, IC= 2mA,f=100MHz 0.5 140 V MHz ■ Marking Marking W3 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1