Transistors SMD Type Product specification BCV61 ■ Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V Collector current IC 100 mA Power dissipation PD 250 mW RθJA 500 ℃/W Tj, TSTG -55 to +150 ℃ Thermal resistance from junction to ambient Operating and Storage and Temperature Range http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Transistors SMD Type Product specification BCV61 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Transistor TR1 Collector-Base Breakdown Voltage V(BR)CBO IC = 10 μA, IE = 0 30 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA, IB = 0 30 V Emitter-Base Breakdown Voltage V(BR)EBO 6 V IC = 10 μA, IC = 0 Collector cutoff current ICBO VCB=30V, IE=0 15 nA Emitter cutoff current IEBO VEB=5V, IC=0 100 nA DC current gain hFE collector-emitter saturation voltage * VCE(sat) base-emitter saturation voltage * VBE(sat) VCE=5V, IC= 100μA 100 VCE=5V, IC= 2mA 110 800 IC = 10 mA; IB = 0.5 mA 0.25 V IC = 100 mA; IB = 5 mA 0.6 V IC = 10 mA; IB = 0.5 mA 0.7 V IC = 100 mA; IB = 5 mA 0.9 V 2.5 pF Collector capacitance Cc IE = ie = 0; VCB = 10 V; f = 1 MHz Transition frequency fT Noise figure F 100 IC = 20 mA; VCE = 20 V; f = 100 MHz IC =200 μA; VCE =5 V; RS =2k Ω ; f = 1 kHz; B = 200 Hz MHz 10 dB Transistor TR2 Base-emitter forward voltage VEBS VCB = 0; IE = -250 mA VCB = 0; IE = -10μA -1.8 -400 V mV DC current gain BCV61A hFE BCV61B IC = 2 mA; VCE = 5 V BCV61C 110 220 200 450 420 800 * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. ■ Marking TYPE BCV61 BCV61A BCV61B BCV61C Marking 1MP 1JP 1KP 1LP http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 Transistors SMD Type Product specification BCV61 ■ Typical Characteristics 30 handbook, full pagewidth VCE1max (V) IE2 = 1 mA 20 5 mA 10 mA 10 50 mA 0 10−1 1 10 RE (Ω) 102 I C1 -------- = 1.3 (see Fig.3). I E2 Fig.1 Maximum collector-emitter voltage as a function of emitter resistance. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3