Transistors IC SMD Type Product specification KTC601U SOT-353 ■ Features Unit: mm +0.1 -0.1 1.3 0.65 0.525 ● Power dissipation: PC=200mW 0.36 +0.15 2.3-0.15 +0.1 1.25-0.1 ● Collector Curren: IC=150mA +0.05 0.1-0.02 Q1 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.95-0.05 Q2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5.0 V Collector Current -Continuous IC 150 mA Collector Power Dissipation(TOTAL) PC 200 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-to-base breakdown voltage V(BR)CBO Ic= 100μA, IE=0 60 V Collector-to-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 50 V Emitter-to-base breakdown voltage V(BR)EBO IE= 100 μA， IC=0 5.0 V Collector cutoff current IcBO VCB= 60 V , IE=0 0.1 μA Collector cutoff current IEBO VCE= 5.0V , IC=0 0.1 μA DC current gain hFE Collector-emitter saturation voltage VCE= 6V, IC= 2.0mA 120 400 VCE(sat) IC=100mA, IB= 10mA Transition frequency fT 0.25 VCE= 10V, IC= 1mA,f=100MHz 80 Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz Noise Figure NF VCE=6V, IC=0.1mA, f=1KHz , Rg=10KΩ V MHz 1 3.5 pF 10 dB ■ hFE Classification Marking LY LGR Rank Y GR Range 120～240 200～400 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1