TYSEMI FMMT415

Transistors
IC
SMD Type
Product specification
FMMT415
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
SOT23 NPN Silicon Planar
1
0.55
High speed pulse generators
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
260
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
6
V
Peak collector current
ICM
60
A
Collector current
IC
500
mA
Power dissipation
Ptot
330
mW
Tj,Tstg
-55 to +150
Operating and storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=1mA,Tamb= -55 to +150
260
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=100ìA
100
V
Emitter-base breakdown voltage
V(BR)EBO IE=10ìA
6
Collector cutoff current
ICBO
V
VCB=80V
0.1
ìA
VCB=80V, Tamb=100
10
ìA
VEB=4V
0.1
ìA
Collector-emitter saturation voltage *
VCE(sat) IC=10mA,IB=1mA
0.5
V
Base-emitter saturation voltage *
VBE(sat) IC=10mA,IB=1mA
0.9
V
Emitter cut-off current
IEBO
Current in second breakdown
ISB
DC current gain *
hFE
Transition frequency
fT
Collector-base capacitance
* Pulse test: tp = 300 ìs; d
Ccb
VC=200V, CCE=620pF
15
A
VC=250V, CCE=620pF
25
A
IC=10mA,VCE=10V
25
IC=10mA,VCE=20V,f=20MHz
40
MHz
8
VCB=20V, IE=0, f=1MHz
pF
0.02.
Marking
Marking
415
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