Transistors SMD Type Product specification FZT458 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 ■ Features ● Collector-emitter voltage: VCEO＞400V +0.1 3.00-0.1 ● Collector current-continuous: IC=300mA +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 ● Complementary to FZT558 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 4.6 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 300 mA Peak Pulse Current ICM 1 A IB 200 mA Ptot 2 W Tj:Tstg -55 to +150 Base Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification FZT458 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Max Unit Breakdown Voltages V(BR)CBO IC=100ìA 400 V Breakdown Voltages VCEO(sus) IC=10mA* 400 V Breakdown Voltages V(BR)EBO IE=100ìA 5 V ICBO VCB=320V 100 nA ICES VCE=320V 100 nA IEBO VEB=4V 100 nA IC=20mA, IB=2mA* 0.2 V IC=50mA, IB=6mA* 0.5 V IC=50mA, IB=5mA* 0.9 V 0.9 V Collector Cut-Off Currents Emitter Cut-Off Current Emitter Saturation Voltages VCE(sat) VBE(sat) Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage Switching times VBE(on) hFE fT Cobo IC=50mA, VCE=10V* IC=1mA, VCE=10V 100 IC=50mA, VCE=10V* 100 IC=100mA, VCE=10V* 15 IC=10mA, VCE=20V,f=20MHz MHz VCB=20V, f=1MHz 5 ton IC=50mA, VCC=100V 135 Typical toff IB1=5mA, IB2=-10mA 2260 Typical * Measured under pulsed conditions. Pulse width=300ìs. Duty cycle http://www.twtysemi.com 300 [email protected] pF ns ns 2% 4008-318-123 2 of 2