Transistors SMD Type Product specification FZT753 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low saturation voltage +0.1 3.00-0.1 Excellent hFE specified up to 2A +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 4.6 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -120 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Ptot 2 W Tj:Tstg -55 to +150 Power Dissipation at Tamb=25 Operating and Storage Temperature Range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification FZT753 Electrical Characteristics Ta = 25 unless otherwise stated Parameter Symbol Testconditons Min Typ. Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC=-100ìA -120 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA* -100 V Emitter-Base Breakdown Voltage V(BR)EBO IE=-100ìA -5 V Collector Cut-Off Current Emitter Cut-Off Current ICBO IEBO Collector-Emitter Saturation Voltage VCE(sat) VCB=-100V -0.1 ìA VCB=-100V,Tamb=100 -10 ìA VEB=-4V -0.1 ìA IC=-1A, IB=-100mA* -0.17 -0.3 V IC=-2A, IB=-200mA* -0.30 -0.5 V -0.9 -1.25 V -0.8 -1.0 V Base-Emitter Saturation Voltage VBE(sat) IC=-1A, IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT Output Capacitance Cobo ton Switching Times IC=-50mA, VCE =-2V* 70 200 IC=-500mA, VCE =-2V* 100 200 IC=-1A, VCE =-2V* 55 170 IC=-2A, VCE =-2V* 25 55 IC=-100mA, VCE=-5V,f=100MHz 100 140 VCB =-10V f=1MHz MHz 30 IC=-500mA, VCC =-10V,IB1=IB2=-50mA toff 300 pF 40 ns 600 ns * Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2% Marking Marking FZT753 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2