Transistors SMD Type Product specification FZT1151A SOT-223 ■ Features Unit: mm +0.2 3.50-0.2 ● Low saturation Voltage ● High Gain +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 4 1 Base 2 Collector 1 3 2 3 Emitter +0.1 0.70-0.1 2.9 4 Collector 4.6 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO -45 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Continuous Collector Current IC -3 A power dissipation PC 2.5 W Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector to base breakdown voltage VCBO IC=-100μA -45 V Collector to emitter breakdown voltage VCEO IC=-10mA -40 V Emitter to base breakdown voltage VEBO IE=-100μA -5.0 Collector cut-off current ICBO VCB =- 36 V, IE = 0 -100 nA Emitter Cut-Off Current IEBO VEB=-4V,IC=0 -100 nA DC current gain hFE IC = -10 mA; VCE = -2 V Collector to emitter saturation voltage VCE(sat) 270 IC = -500mA; VCE =- 2V 250 IC = -2A; VCE = -2V 180 V 450 800 300 IC =- 1.8A; IB = -70mA -0.26 IC = -3A; IB = -250mA Output capacitance Cob Transition frequency fT -0.3 V V VCB =-10 V, IE = 0,f=1.0MHz 40 pF IC = -50 mA; VCE =-10V; f = 50 MHz 145 MHz ■ Marking Marking 1151A http://www.twtysemi.com [email protected] 4008-318-123 1 of 1