Transistors IC SMD Type Product specification 2SC5585 SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 1 +0.15 1.6-0.15 Hig current. +0.05 0.8-0.05 2 +0.01 0.1-0.01 0.55 Features Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 6 V Collector current IC 500 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Tstg -55 to +125 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons 12 V IE = 10 6 V Collectoe-emitter brakdown voltage VCEO Emitter-base breakdown voltage VEBO Collector cut-off current ICBO VCB=15 V Emitter cut-off current IEBO VEB= 6 V DC current gain hFE VCE= 2 V, IC = 10mA VCE(sat) IC=200mA,IB=10mA cob fT Unit IC = 1mA IC = 10 Collector output capacitance Max V VCBO Transition frequency Typ 15 Collector-base breakdown voltage Collector emitter saturation voltage Min A A 270 100 nA 100 nA 680 90 250 mV VCB=10V,IE=0,f=1MHz 7.5 pF VCE = 2V, IE =-10mA,f=100MHz 320 MHz Marking Marking BX http://www.twtysemi.com [email protected] 4008-318-123 1 of 1