Product specification KTC4379 SOT-89 ■ Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A ● Complementary to KTA1666 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1 2 2.60±0.1 1 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-Emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector Current IC 2 A Collector Power Dissipation PC 500 mW Junction Temperature Tj 150 ℃ Tstg -55 to 150 ℃ Storage Temperature Range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 50 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 50 V Emitter-Base Breakdown Voltage 5 V(BR)EBO IE=1mA, IC=0 Collector Cut-off Current ICBO VCB=50V, IE=0 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 100 nA DC Current Gain hFE VCE=2V, IC=500mA 70 VCE=2V, IC=1.5A 40 Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=50mA Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=50mA Transition frequency fT Collector Output Capacitance Cob V 240 0.5 1.2 V V VCE=2V, IC=500mA 120 MHz VCB=10V, IE=0, f=1MHz 30 pF ■ hFE Classification Marking UO UY Rank O Y Range 70～140 http://www.twtysemi.com 120 ～240 [email protected] 4008-318-123 1 of 1