Transistors SMD Type NPN Silicon Planar Medium Power Transistor FCX493 Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 mA Peak Pulse Current ICM 2 A Base Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range IB 200 mA Ptot 1 W Tj:Tstg -65 to 150 www.kexin.com.cn 1 Transistors SMD Type FCX493 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Max Unit Breakdown Voltages V(BR)CBO IC=100ìA 120 Breakdown Voltages VCEO(sus) IC=10mA* 100 V Breakdown Voltages V(BR)EBO IE=100ìA 5 V ICBO VCB=100V ICES VCES=100V 100 nA IEBO VEB=4V 100 nA IC=500mA, IB=50mA 0.3 V Collector Cut-Off Currents Emitter Cut-Off Current V 100 nA Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=100mA 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=100mA 1.15 V Base-Emitter Turn On Voltage VBE(on) IC=1A, VCE=10V 1.0 V Static Forward Current Transfer Ratio Transition Frequency hFE fT Collector-Base Breakdown Voltage Cobo IC=1mA, VCE=10V* 100 IC=250mA, VCE=10V* 100 IC=500mA, VCE=10V* 60 IC=1A, VCE=10V* 20 IC=50mA, VCE=10V,f=100MHz 150 VCB=10V, f=1MHz * Measured under pulsed conditions. Pulse width=300ìs. Duty cycle Marking Marking 2 Min N93 www.kexin.com.cn 2% 300 MHz 10 pF