Transistors SMD Type PNP Silicon High Voltage Transistor FZT593 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 4.6 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -120 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb=25 Ptot 2 W Tj:Tstg -55 to +150 Operating and Storage Temperature Range www.kexin.com.cn 1 Transistors SMD Type FZT593 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ. Max Unit V(BR)CBO IC=-100ìA -120 V Breakdown Voltages V(BR)CEO IC=-10mA* -100 V Breakdown Voltages V(BR)EBO IE=-100ìA -5 V Collector Cut-Off Current ICBO VCB=-100V -100 nA Emitter Cut-Off Current IEBO VEB=-4V -100 nA Collector-Emitter Cut-Off Current ICES VCES=-100V -100 nA IC=-250mA,IB=-25mA* -0.2 V IC=-500mA IB=-50mA* -0.3 V IC=-500mA,IB=-50mA* -1.1 V -1.0 V VCE(sat) Saturation Voltages VBE(sat) Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio VBE(on) hFE Transition Frequency fT Output Capacitance Cobo IC=-1mA, VCE=-5V* IC=-1mA, VCE=-5V 100 IC=-250mA,VCE=-5V* 100 IC=-500mA, VCE=-5V* 100 IC=-1A, VCE=-5V* 50 IC=-50mA, VCE=-10V,f=100MHz 50 VCB=-10V, f=1MHz * Measured under pulsed conditions. Pulse width=300ìs. Duty cycle Marking Marking 2 Min Breakdown Voltages FZT593 www.kexin.com.cn 2% 300 MHz 5 pF