Transistors IC SMD Type Product specification FMMT449 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Peak collector current ICM 2 A Collector current IC 1 A Base current IB 200 mA Ptot 500 mW Tj,Tstg -55 to +125 Power dissipation Operating and storage temperature range +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 50 Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA,IC=0 5 V Collector cutoff current ICBO Emitter cut-off current IEBO V 0.1 ìA VCB=40V,TamB=100 10 ìA VEB=4V,IC=0 0.1 ìA VCB=40V,IE=0 Collector-emitter saturation voltage * VCE(sat) IC=1A,IB=100mA IC=2A,IB=200mA 0.5 1.0 V Base-emitter saturation voltage * VBE(sat) IC=1A,IB=100mA 1.25 V Base-emitter voltage * VBE(ON) IC=1A,VCE=2V 1.0 V Static Forward Current Transfer Ratio Current-gain-bandwidth product hFE fT Output capacitance Cobo * Pulse width=300ìs. Duty cycle IC=50mA, VCE=2V* 70 IC=500mA, VCE=2V* 100 IC=1A, VCE=2V* 80 IC=2A, VCE=2V* 40 IC=50mA,VCE=10V,f=100MHz 150 300 MHz 15 VCB=10V,f=1MHz pF 2% Marking Marking 449 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1