Transistors SMD Type NPN Silicon Planar High Current Transistor FZT857 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 Up to 3.5 Amps continuous collector current, up to 5 Amp peak +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 VCEO = 300V Very low saturation voltage 1 Base Excellent hFE specified up to 3 Amps 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 4.6 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 350 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 5 A Continuous Collector Current IC 3.5 A Power Dissipation at Tamb=25 Ptot 3 W Tj:Tstg -55 to +150 Operating and Storage Temperature Range www.kexin.com.cn 1 Transistors SMD Type FZT857 Electrical Characteristics Ta = 25 Parameter unless otherwise stated Symbol Testconditons Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC=100ìA 350 475 V Collector-Emitter Breakdown Voltage V(BR)CER IC=1ìA, RB 1KÙ 350 475 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA* 300 350 V Emitter-Base Breakdown Voltage V(BR)EBO IE=100ìA 6 8 Collector Cut-Off Current ICBO Collector Cut-Off Current R 1KÙ ICER Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage VCE(sat) V VCB=300V 50 nA VCB=300V,Tamb=100 1 ìA VCB=300V 50 nA VCB=300V,Tamb=100 1 ìA VEB=6V 10 nA IC=500mA, IB=50mA* 100 mV IC=1A, IB=100mA* 155 mV IC=2A, IB=200mA* 230 mV IC=3.5A, IB=600mA* 345 mV Base-Emitter Saturation Voltage VBE(sat) IC=3.5A, IB=600mA* 1250 mV Base-Emitter Turn-On Voltage VBE(on) IC=3.5A, VCE=10V* 1.12 V Static Forward Current Transfer Ratio hFE Transition Frequency fT Output Capacitance Cobo Switching Times IC=10mA, VCE=5V 100 200 IC=500mA, VCE=10V* 100 200 IC=2A, VCE=10V* 15 25 Marking Marking FZT857 www.kexin.com.cn 300 IC=3A, VCE=10V* 15 IC=100mA, VCE=10V,f=50MHz 80 MHz VCB=20V, f=1MHz 11 pF ton IC=250mA, IB1=25mA 100 ns toff IB2=25mA, VCC=50V 5300 ns *Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2% 2 Min