Product specification KAP50-03(BAP50-03) SOD-323 Unit: mm +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 ■ Features ● Low diode capacitance. ● Low diode forward resistance. +0.1 2.6-0.1 0.375 +0.05 0.1-0.02 0.475 1.0max ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit VR 50 V Continuous reverse voltage Continuous forward current IF 50 mA Total power dissipation TS = 90℃ Ptot 500 mW Storage temperature Tstg -65 to +150 ℃ Tj 150 ℃ Rth j-s 85 K/W Junction temperature Thermal resistance from junction to soldering point ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Forward voltage VF IF = 50 mA Reverse voltage VR IR = 10 μA Reverse current IR Diode capacitance Cd Diode forward resistance rD Min Typ Max Unit 0.95 1.1 V 50 V VR = 50 V 100 nA VR = 0; f = 1 MHz 0.4 pF VR = 1 V; f = 1 MHz 0.3 0.55 pF pF VR = 5 V; f = 1 MHz 0.2 0.35 IF = 0.5 mA; f = 100 MHz 25 40 Ω IF = 1 mA; f = 100 MHz 14 25 Ω IF = 10 mA; f = 100 MHz 3 5 Ω ■ Marking Marking A8 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification KAP50-03(BAP50-03) ■ Typical Characteristics Tj = 25 ℃; f = 100 MHz. Tj = 25 ℃; f = 100 MHz. Fig.1 Forward resistance as a function of forward current; typical values. Fig.2 Diode capacitance as a function of reverse voltage; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. (1) IF = 10 mA. (2) IF = 1 mA. (3) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C. Tamb = 25℃. Fig.4 Isolation (|S21|2) of the diode as a function of Fig.3 Insertion loss (|S21|2) of the diode as a frequency; typical values. function of frequency; typical values. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2