TYSEMI KAP50-03

Product specification
KAP50-03(BAP50-03)
SOD-323
Unit: mm
+0.05
0.85-0.05
+0.1
1.3-0.1
+0.05
0.3-0.05
+0.1
1.7-0.1
■ Features
● Low diode capacitance.
● Low diode forward resistance.
+0.1
2.6-0.1
0.375
+0.05
0.1-0.02
0.475
1.0max
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
VR
50
V
Continuous reverse voltage
Continuous forward current
IF
50
mA
Total power dissipation TS = 90℃
Ptot
500
mW
Storage temperature
Tstg
-65 to +150
℃
Tj
150
℃
Rth j-s
85
K/W
Junction temperature
Thermal resistance from junction to soldering point
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
Forward voltage
VF
IF = 50 mA
Reverse voltage
VR
IR = 10 μA
Reverse current
IR
Diode capacitance
Cd
Diode forward resistance
rD
Min
Typ
Max
Unit
0.95
1.1
V
50
V
VR = 50 V
100
nA
VR = 0; f = 1 MHz
0.4
pF
VR = 1 V; f = 1 MHz
0.3
0.55
pF
pF
VR = 5 V; f = 1 MHz
0.2
0.35
IF = 0.5 mA; f = 100 MHz
25
40
Ω
IF = 1 mA; f = 100 MHz
14
25
Ω
IF = 10 mA; f = 100 MHz
3
5
Ω
■ Marking
Marking
A8
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[email protected]
4008-318-123
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Product specification
KAP50-03(BAP50-03)
■ Typical Characteristics
Tj = 25 ℃; f = 100 MHz.
Tj = 25 ℃; f = 100 MHz.
Fig.1 Forward resistance as a function of forward
current; typical values.
Fig.2 Diode capacitance as a function of reverse
voltage; typical values.
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
(1) IF = 10 mA. (2) IF = 1 mA. (3) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit and biased via the
analyzer Tee network.
Tamb = 25 °C.
Tamb = 25℃.
Fig.4 Isolation (|S21|2) of the diode as a function of
Fig.3 Insertion loss (|S21|2) of the diode as a
frequency; typical values.
function of frequency; typical values.
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