TYSEMI BAP50-04

Product specification
BAP50-04
SOT-23
■ Features
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
● Low diode capacitance.
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
● Low diode forward resistance.
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
0-0.1
1
3
+0.1
0.38-0.1
2
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
VR
50
V
Continuous reverse voltage
Continuous forward current
IF
50
mA
Total power dissipation TS = 90℃
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
℃
Tj
150
℃
Rth j-s
220
℃/W
Junction temperature
Thermal resistance from junction to soldering point
■ Electrical Characteristics Ta = 25℃
Symbol
Test conditons
Forward voltage
Parameter
VF
IF = 50 mA
Reverse voltage
VR
IR = 10 μA
Reverse current
IR
VR = 50 V
Diode capacitance
Cd
rD
Diode forward resistance
Min
Typ
Max
Unit
0.95
1.1
V
100
nA
50
V
VR = 0; f = 1 MHz
0.45
pF
VR = 1 V; f = 1 MHz
0.35
0.5
pF
VR = 5 V; f = 1 MHz
0.3
0.5
pF
IF = 0.5 mA; f = 100 MHz
25
40
Ω
IF = 1 mA; f = 100 MHz
14
25
Ω
IF = 10 mA; f = 100 MHz
3
5
Ω
■ Marking
Marking
4LP
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Product specification
BAP50-04
■ Typical Characteristics
103
handbook, halfpage
103
handbook, halfpage
rD
(Ω)
Cd
(fF)
102
10
1
10 −2
10 −1
1
I F (mA)
102
10 −1
10
f = 100 MHz; Tj = 25 °C.
1
10
VR (V)
10 2
f = 1 MHz; Tj = 25 °C.
Fig.1 Forward resistance as a function of the
Fig.2 Diode capacitance as a function of reverse
forward current; typical values.
voltage; typical values.
0
0
handbook, halfpage
2
handbook, halfpage
2
(1)
|S21|
(dB)
−1
|S21|
(dB)
−5
(2)
(3)
−2
−10
−3
−15
−4
−20
−5
0.5
1
1.5
2
2.5
−25
0.5
3
1
1.5
2
2.5
f (GHz)
(1) IF = 10 mA.
(2) IF = 1 mA.
3
f (GHz)
(3) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb = 25 °C.
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb = 25 °C.
Fig.3 Insertion loss ( |S21|2 ) of the diode in on-state
as a function of frequency; typical values.
Fig.4 Isolation ( |S21|2 ) of the diode in off-state as a
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function of frequency; typical values.
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