Product specification IRLML5203PbF HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS RDS(on) max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A * Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ' 6 Micro3TM A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -30 -3.0 -2.4 -24 1.25 0.80 10 ± 20 -55 to + 150 V mW/°C V °C Max. Units 100 °C/W A W Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient http://www.twtysemi.com [email protected] 1 of 2 Product specification IRLML5203PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 ––– ––– ––– -1.0 3.1 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.019 ––– ––– ––– ––– ––– ––– ––– ––– 9.5 2.3 1.6 12 18 88 52 510 71 43 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, I D = -1mA 98 VGS = -10V, ID = -3.0A mΩ 165 VGS = -4.5V, ID = -2.6A -2.5 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -3.0A -1.0 VDS = -24V, VGS = 0V µA -5.0 VDS = -24V, VGS = 0V, TJ = 70°C -100 VGS = -20V nA 100 VGS = 20V 14 ID = -3.0A 3.5 nC VDS = -24V 2.4 VGS = -10V ––– VDD = -15V ––– ID = -1.0A ns ––– R G = 6.0Ω ––– VGS = -10V ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units -1.3 -24 ––– ––– ––– ––– 17 12 -1.2 26 18 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.3A, VGS = 0V TJ = 25°C, IF = -1.3A di/dt = -100A/µs D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on FR-4 board, t ≤ 5sec. Pulse width ≤ 400µs; duty cycle ≤ 2%. http://www.twtysemi.com [email protected] 2 of 2