TYSEMI KDS2572

IC
IC
MOSFET
SMD Type
Product specification
KDS2572
Features
RDS(ON) = 0.040
(Typ.), VGS = 10V
Qg(TOT) = 29nC (Typ.), VGS = 10V
Low QRR Body Diode
Maximized efficiency at high frequencies
UIS Rated
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
150
V
Gate to Source Voltage
VGS
20
V
Drain Current Continuous (TC = 25 ) *1
ID
4.9
A
Drain Current Continuous (TC = 100 ) *1
3.1
A
Power dissipation
2.5
W
20
mW/
PD
Derate above 25
Operating and Storage Temperature
TJ, TSTG
Thermal Resistance Junction to Case
-55 to 150
R
JC
25
/W
Thermal Resistance Junction to Case at 10 seconds *2
R
JA
50
/W
Thermal Resistance Junction to Case at steady state *2
R
JA
85
/W
*1 VGS = 10V, RqJA = 50 /W
*2 R
JA is
measured with 1.0in2 copper on FR-4 board
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[email protected]
4008-318-123
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IC
IC
MOSFET
SMD Type
Product specification
KDS2572
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain to Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Testconditons
Min
ID = 250mA, VGS = 0V
Typ
Max
150
Unit
V
VDS = 120V,VGS = 0V
1
A
VDS = 120V,VGS = 0V ,TC = 150
Gate to Source Leakage Current
IGSS
VGS =
20V
100
nA
4
V
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250mA
Drain to Source On Resistance
rDS(ON)
ID = 4.9A, VGS = 10V
0.040 0.047
Drain to Source On Resistance
rDS(ON)
ID = 4.9A, VGS = 6V
0.044 0.053
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
2
VDS = 25V, VGS = 0V,f = 1MHz
2050
pF
220
pF
48
pF
Total Gate Charge at 10V
Qg(TOT)
VGS=0V to 10V,VDD=75V,ID=4.9A,Ig=1.0mA
29
38
nC
Threshold Gate Charge
Qg(TH)
VGS=0V to 2V,VDD=75V,ID=4.9A,Ig=1.0mA
4
6
nC
Gate to Source Gate Charge
Qgs
Gate to Drain "Miller" Charge
Qgd
Gate Charge Threshold to Plateau
Qgs2
Turn-On Time
tON
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
Source to Drain Diode Voltage
VSD
Reverse Recovered Charge
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trr
QRR
6
nC
nC
27
14
VDD = 75V, ID = 4.9A,VGS = 10V, RG = 10
tf
tOFF
nC
4
td(ON)
Turn-Off Time
Reverse Recovery Time
VDD = 75V,ID = 4.9A,Ig = 1.0mA
8
ns
ns
4
ns
44
ns
22
ns
100
ns
ISD = 4.9A
1.25
V
ISD = 3.1A
1.0
V
ISD = 4.9A, dISD/dt =100A/
72
ns
158
nC
ISD = 4.9, dISD/dt =100A/
[email protected]
s
s
4008-318-123
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