IC IC MOSFET SMD Type Product specification KDS2572 Features RDS(ON) = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 150 V Gate to Source Voltage VGS 20 V Drain Current Continuous (TC = 25 ) *1 ID 4.9 A Drain Current Continuous (TC = 100 ) *1 3.1 A Power dissipation 2.5 W 20 mW/ PD Derate above 25 Operating and Storage Temperature TJ, TSTG Thermal Resistance Junction to Case -55 to 150 R JC 25 /W Thermal Resistance Junction to Case at 10 seconds *2 R JA 50 /W Thermal Resistance Junction to Case at steady state *2 R JA 85 /W *1 VGS = 10V, RqJA = 50 /W *2 R JA is measured with 1.0in2 copper on FR-4 board http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC MOSFET SMD Type Product specification KDS2572 Electrical Characteristics Ta = 25 Parameter Symbol Drain to Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Testconditons Min ID = 250mA, VGS = 0V Typ Max 150 Unit V VDS = 120V,VGS = 0V 1 A VDS = 120V,VGS = 0V ,TC = 150 Gate to Source Leakage Current IGSS VGS = 20V 100 nA 4 V Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250mA Drain to Source On Resistance rDS(ON) ID = 4.9A, VGS = 10V 0.040 0.047 Drain to Source On Resistance rDS(ON) ID = 4.9A, VGS = 6V 0.044 0.053 Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 2 VDS = 25V, VGS = 0V,f = 1MHz 2050 pF 220 pF 48 pF Total Gate Charge at 10V Qg(TOT) VGS=0V to 10V,VDD=75V,ID=4.9A,Ig=1.0mA 29 38 nC Threshold Gate Charge Qg(TH) VGS=0V to 2V,VDD=75V,ID=4.9A,Ig=1.0mA 4 6 nC Gate to Source Gate Charge Qgs Gate to Drain "Miller" Charge Qgd Gate Charge Threshold to Plateau Qgs2 Turn-On Time tON Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) Source to Drain Diode Voltage VSD Reverse Recovered Charge http://www.twtysemi.com trr QRR 6 nC nC 27 14 VDD = 75V, ID = 4.9A,VGS = 10V, RG = 10 tf tOFF nC 4 td(ON) Turn-Off Time Reverse Recovery Time VDD = 75V,ID = 4.9A,Ig = 1.0mA 8 ns ns 4 ns 44 ns 22 ns 100 ns ISD = 4.9A 1.25 V ISD = 3.1A 1.0 V ISD = 4.9A, dISD/dt =100A/ 72 ns 158 nC ISD = 4.9, dISD/dt =100A/ [email protected] s s 4008-318-123 2 of 2