Transistors IC SMD Type Product specification KDD2572 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 (Typ.), VGS = 10V, ID = 9A Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) 2.3 Qualified to AEC Q101 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 Low Miller Charge +0.15 0.50-0.15 +0.2 9.70-0.2 Qg(tot) = 26nC (Typ.), VGS = 10V 3.80 rDS(ON) = 45m +0.15 1.50-0.15 TO-252 +0.15 4.60-0.15 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to Source Voltage Parameter VDSS 150 V Gate to Source Voltage VGS 20 V Drain Current Continuous (TC = 25 , VGS = 10V) 29 A Drain Current Continuous (TC = 100 , VGS = 10V) 20 A 4 A ID Drain Current Continuous(TC=100 ,VGS=10V,R JA=52 /W)) Single Pulse Avalanche Energy * EAS 36 mJ Power dissipation PD 135 W Derate above 25 PD 0.9 TJ, TSTG -55 to 175 Operating and Storage Temperature W/ Thermal Resistance Junction to Case R JC 1.11 /W Thermal Resistance Junction to Ambient to252 R JA 100 /W Thermal Resistance Junction to Ambient to252 ,1in2 copper pad area R JA 52 /W * Starting TJ = 25 , L = 0.2 mH, IAS = 19A. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KDD2572 Electrical Characteristics Ta = 25 Parameter Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol BVDSS IDSS Testconditons Min Typ 150 ID = 250 A, VGS = 0V Gate to Source Leakage Current Drain to Source On-Resistance IGSS VGS(th) rDS(ON) Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 1 250 20V 2 VDS = VGS, ID = 250 A A 100 nA 4 V ID = 9A, VGS = 10V 0.045 0.054 ID = 4A, VGS = 6V, 0.05 ID = 9A, VGS = 10V,TC = 175 0.126 0.146 VDS = 25V, VGS = 0V,f = 1MHz Unit V VDS = 120V,VGS = 0V VDS = 120V,VGS = 0V,TC = 150 Gate Threshold Voltage Max 0.075 1770 pF 183 pF 40 pF Total Gate Charge at 10V Qg(TOT) VGS =0V to 10V,VDD=75V,ID=9A,Ig=1.0mA 26 34 nC Threshold Gate Charge Qg(TH) VGS=0V to 2V,VDD=75V,ID=9A,Ig=1.0mA 3.3 4.3 nC Gate to Source Gate Charge Qgs Gate Charge Threshold to Plateau Qgs2 Gate to Drain "Miller" Charge Qgd Turn-On Time tON Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDD = 75V,ID = 9A,Ig = 1.0mA nC 6 nC 36 ns 11 ns 14 ns 31 ns td(OFF) VDD = 75V, ID = 33A,VGS = 10V, RGS = 11 14 tf Source to Drain Diode Voltage VSD ISD = 9A ISD = 4A http://www.twtysemi.com 5 tr tOFF Reverse Recovery Charge nC td(ON) Turn-Off Time Reverse Recovery Time 8 ns 66 ns 1.25 V 1.0 V trr ISD = 9A, dISD/dt= 100A/ s 74 ns QRR ISD = 9A, dISD/dt= 100A/ s 169 nC [email protected] 4008-318-123 2 of 2