MOSFET SMD Type N-Channel PowerTrench MOSFET KDB2532(FDB2532) TO-263 Unit: mm rDS(ON) = 14m +0.1 1.27-0.1 Features (Typ.), VGS = 10V, ID = 33A +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse) +0.2 2.54-0.2 +0.2 15.25-0.2 Low QRR Body Diode +0.1 0.81-0.1 2.54 5.08 +0.2 2.54-0.2 +0.2 8.7-0.2 Low Miller Charge 5.60 Qg(tot) = 82nC (Typ.), VGS = 10V 1 Gate 0.4 +0.1 -0.1 +0.2 -0.2 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 150 V Gate to source voltage VGSS 20 V Drain current-Continuous TC=25 ID TA=25 Power dissipation PD A 8 A 310 W 2.07 Derate above 25 Thermal Resistance Junction to Ambient 79 RèJA 43 Channel temperature Tch 175 Storage temperature Tstg -55 to +175 W/ /W www.kexin.com.cn 1 MOSFET SMD Type KDB2532(FDB2532) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Symbol VDSS IDSS Testconditons ID=250ìA VGS=0V Min Typ 150 Gate leakage current Drain to source on-state resistance RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance 1 250 VGS= 20V VDS = VGS, ID = 250ìA 100 2.0 4.0 VGS=10V,ID=33A 0.014 0.016 VGS=6V,ID=16A 0.016 0.024 VGS=10V,ID=33A,TC=175 0.040 0.048 VDS=25V,VGS=0,f=1MHZ nA V Ù 5870 pF 615 pF 135 Crss A pF Total Gate Charge at 10V Qg(TOT) VGS = 0V to 10V 82 107 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V 11 14 nC Gate to Source Gate Charge Qgs VDS = 75V, 23 nC Gate Charge Threshold to Plateau Qgs2 Ig=1.0mA 13 nC Gate to Drain "Miller" Charge Qgd ID = 33A 19 nC Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time 69 tON td(ON) tr td(OFF) VDD = 75V, ID = 33A VGS = 10V, RGS = 3.6 tf ns 30 ns 39 ns 17 ns 84 tOFF ns 16 ns trr ISD = 33A, diSD/dt = 100A/ìs 105 ns Reverse Recovered Charge QRR ISD = 33A, diSD/dt = 100A/ìs 327 nC Source to Drain Diode Voltage VSD ISD = 33A 1.25 V ISD = 16A 1.0 V Reverse Recovery Time 2 IGSS VGS(th) Unit V VDS=120V,VGS=0 VDS=120V,VGS=0,TC=150 Gate threshold voltage Max www.kexin.com.cn