SMD Type Product specification KDB3672 (FDB3672) TO-263 Features (Typ.), VGS = 10V, ID =44A +0.1 1.27-0.1 rDS(ON) =24m Qg(tot) = 24nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse) +0.1 0.81-0.1 2.54 5.08 +0.2 2.54-0.2 +0.2 8.7-0.2 Low QRR Body Diode 5.60 Low Miller Charge 1 Gate 0.4 +0.1 -0.1 +0.2 -0.2 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V Drain current-Continuous TC=25 44 ID TA=25 Power dissipation PD A 7.2 A 120 W 0.8 Derate above 25 Unit W/ Thermal Resistance Junction to Ambient RèJA 62 /W Thermal Resistance, Junction-to-Case RèJC 1.25 /W Channel temperature Tch 175 Storage temperature Tstg -55 to +175 http://www.twtysemi.com [email protected] 4008-318-123 1of 2 SMD Type Product specification KDB3672 (FDB3672) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Symbol VDSS IDSS Testconditons ID=250ìA VGS=0V Min Typ 100 Gate threshold voltage Drain to source on-state resistance Input capacitance IGSS VGS(th) RDS(on) VGS= 20V VDS = VGS, ID = 250ìA Output capacitance Coss Reverse transfer capacitance Crss 1 A 250 A 100 2.0 4.0 VGS=10V,ID=44A 0.024 0.028 VGS=6V,ID=21A 0.031 0.047 VGS=10V,ID=44A,TC=175 0.054 0.068 Ciss 1710 VDS=25V,VGS=0,f=1MHZ pF pF 24 31 Threshold Gate Charge Qg(TH) VGS = 0V to 2V 3.5 4.5 Qgs2 Gate to Drain "Miller" Charge Qgd Turn-On Time tON Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge http://www.twtysemi.com VDS = 50 V, ID = 44A,Ig=1.0mA tr td(OFF) tf 7.2 nC nC ns 11 ns 59 ns 26 ns 44 ns 104 ns ISD=44A 1.25 V tOFF VSD nC nC 104 VDD = 50 V, ID = 44A, VGS = 10 V, RGS = 11.0 nC 11 4.5 td(ON) Ù 62 VGS = 0V to 10V Gate Charge Threshold to Plateau V 247 Qg(TOT) Qgs nA pF Total Gate Charge at 10V Gate to Source Gate Charge Unit V VDS=80V,VGS=0 VDS=80V,VGS=0,TC=150 Gate leakage current Max ISD=21A 1.0 V trr ISD = 44A, dISD/dt =100A/ìs 52 ns QRR ISD = 44A, dISD/dt =100A/ìs 80 nC [email protected] 4008-318-123 2 of 2