Product specification KDS3912 Features 3 A, 100 V. RDS(ON) = 125m @ VGS = 10 V RDS(ON) = 135m @ VGS = 6 V Low gate charge (14 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGS Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power Dissipation for Dual Operation PD Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (Note 1b) V A 20 A 1.6 W 1 PD 0.9 TJ, TSTG -55 to 175 Power Dissipation for Single Operation (Note 1c) Operating and Storage Temperature 20 3 W 0.9 Thermal Resistance Junction to Case (Note 1) R JC 40 /W Thermal Resistance Junction to Ambient (Note 1a) R JA 78 /W http://www.twtysemi.com [email protected] 4008-318-123 1of 2 IC IC SMD Type Product specification KDS3912 Electrical Characteristics Ta = 25 Parameter Symbol Single Pulse Drain-Source Avalanche Energy W DSS Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage IAR BVDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Testconditons ( Not 2) Gate-Body Leakage, Forward IGSSF Gate-Body Leakage, Reverse IGSSR Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 Forward Transconductance gFS mJ A V 108 mV/ A VGS = 20 V, VDS = 0 V 100 nA VGS = -20 V, VDS = 0 V -100 nA 4 V 2 A 2.5 -6 A, Referenced to 25 mV/ VGS = 10 V, ID = 3 A 92 125 VGS = 6 V, ID = 2.8 A 98 135 175 250 VGS = 10 V, ID =3 A,TJ = 125 ID(on) 90 10 ID = 250 On-State Drain Current Unit 100 A A, Referenced to 25 VDS = 80 V, VGS = 0 V RDS(on) Max 3.0 VGS = 0 V, ID = 250 IDSS Static Drain-Source On-Resistance Typ Single Pulse,VDD=50V,ID=3A(Not 2) ID = 250 Gate Threshold Voltage Temperature Coefficient Min VGS = 10 V, VDS = 10V 10 VDS = 10 V, ID = 3A m A 11 S 632 pF 40 pF pF Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 20 Turn-On Delay Time td(on) 8.5 17 ns Turn-On Rise Time tr 2 4 ns Turn-Off Delay Time td(off) 23 37 ns VDS = 50 V, VGS = 0 V,f = 1.0 MHz VDD = 50 V, ID = 1 A,VGS = 10 V, RGEN = 6 Turn-Off Fall Time tf 4.5 9 ns Total Gate Charge Qg 14 20 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 2.4 nC 3.8 nC IS VSD Diode Reverse Recovery Time trr Diode Reverse Recovery Charge Qrr http://www.twtysemi.com VDS = 50 V, ID = 3 A,VGS = 10 V (Note 2) VGS = 0 V, IS = 1.3 A (Not 2) 0.76 1.3 A 1.2 V IF = 3A 30 nS diF/dt = 100 A/ 106 nC [email protected] s (Not 2) 4008-318-123 2 of 2