IC IC SMD Type Dual P-Channel 2.5V Specified PowerTrench MOSFET KDW2504P TSSOP-8 Features Unit: mm -3.8 A, - 20 V. RDS(ON) = 0.043 RDS(ON) = 0.070 @ VGS = -4.5 V @ VGS =-2.5V Low gate charge High performance trench technology for extremely low RDS(ON) Extended VGSS range ( 12V) for battery applications Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS -20 V Gate to Source Voltage VGS 12 V -3.8 A -30 A Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) PD Power Dissipation for Single Operation (Note 1b) Operating and Storage Temperature 1 W 0.6 TJ, TSTG -55 to 150 Thermal Resistance Junction to Ambient (Note 1a) R JA 125 /W Thermal Resistance Junction to Ambient (Note 1b) R JA 208 /W www.kexin.com.cn 1 IC IC SMD Type KDW2504P Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient Testconditons VGS = 0 V, ID = -250 ID = -250 Min Typ Max -20 A V -16 A, Referenced to 25 mV/ Zero Gate Voltage Drain Current IDSS VDS = -16 V, VGS = 0 V -1 Gate-Body Leakage, Forward IGSSF VGS = -12 V, VDS = 0 V -100 nA Gate-Body Leakage, Reverse IGSSR VGS = 12 V, VDS = 0 V 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 -1.5 V Gate Threshold Voltage Temperature Coefficient ID = -250 -0.6 A Static Drain-Source On-Resistance On-State Drain Current RDS(on) ID(on) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss -1 3 A, Referenced to 25 VGS =-4.5 V, ID =-3.8 A A mV/ 0.036 0.043 VGS = -2.5 V, ID = -3.0 A 0.056 0.070 VGS = -4.5 V, ID =-3.8 A,TJ = 125 0.049 0.069 VGS = -4.5 V, VDS = -5V -15 VDS = -5 V, ID = -3.5A VDS = -10 V, VGS = 0 V,f = 1.0 MHz A 13.2 S 1015 pF 446 pF Reverse Transfer Capacitance Crss 118 Turn-On Delay Time td(on) 11 20 ns Turn-On Rise Time tr 18 32 ns Turn-Off Delay Time td(off) 34 55 ns 34 55 ns 9.7 16 nC Turn-Off Fall Time VDD = -5 V, ID = -1 A,VGS = -4.5 V, RGEN = 6 tf Total Gate Charge Vgs=5V Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VDS = -5 V, ID = -3.8 A,VGS=4.5V(Note 2) 2.2 nC 2.4 nC IS VSD VGS = 0 V, IS =- 0.83 A (Note 2) pF -0.7 -0.83 A -1.2 V Notes: 1R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R by the user's board design. a) R JA is 125 /W (steady state) when mounted on a 1 inch2 copper pad on FR-4. b) R JA is 208 /W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width 2 Unit www.kexin.com.cn 300 s, Duty Cycle 2.0% CA is determined