Transistors IC IC SMD Type Product specification KDS4559 Features N-Channel 4.5 A, 60 V RDS(ON) = 55m RDS(ON) = 75m @ VGS = 10 V @ VGS =4.5V P-Channel -3.5 A, -60 V RDS(ON) = 105 m RDS(ON) = 135 m @ VGS =- 10 V @ VGS =-4.5V Absolute Maximum Ratings Ta = 25 Symbol N-Channel P- Channel Unit Drain to Source Voltage Parameter VDSS 60 -60 V Gate to Source Voltage VGS 20 V Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power Dissipation for Single Operation PD PD -3.5 A 20 -20 A 2 W 1.2 W 1 (Note 1c) Operating and Storage Temperature 4.5 1.6 Power Dissipation for Single Operation (Note 1a) (Note 1b) 20 TJ, TSTG -55 to 175 Thermal Resistance Junction to Ambient (Note 1a) R JA 78 /W Thermal Resistance Junction to Case R JC 40 /W http://www.twtysemi.com (Note 1) [email protected] 4008-318-123 1 of 3 Transistors IC IC SMD Type Product specification KDS4559 Electrical Characteristics Ta = 25 Parameter Symbol Single Pulse Drain-Source Avalanche Energy W DSS Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Testconditons VDD = 30 V, ID = 4.5 A IAR BVDSS VGS = 0 V, ID = 250 VGS = 0 V, ID = -250 ID = 250 Breakdown Voltage Temperature Coefficient IDSS Gate-Body Leakage IGSS Gate Threshold Voltage VGS(th) A, Referenced to 25 Max Unit N-Ch 90 mJ N-Ch 4.5 A N-Ch 60 P-Ch -60 58 P-Ch -49 Static Drain-Source On-Resistance RDS(on) 1 VDS = -48 V, VGS = 0 V P-Ch -1 VGS = 20V, VDS = 0 V N-Ch 100 VGS = 20 V, VDS = 0 V P-Ch 100 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A A, Referenced to 25 A, Referenced to 25 N-Ch 1 2.2 3 P-Ch -1 -1.6 -3 N-Ch -5.5 P-Ch 4 VGS = 10 V, ID = 4.5 A,TJ = 125 42 55 N-Ch 72 94 VGS = 4.5 V, ID =4 A 55 75 VGS = -10 V, ID =-3.5 A 82 105 VGS = -10 V, ID =-3.5 A,TJ = 125 Forward Transconductance ID(on) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr P-Ch Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge http://www.twtysemi.com Qgd 130 190 105 135 VGS = 10 V, VDS = 5V N-Ch 20 VGS = -10 V, VDS = -5V P-Ch -20 VDS = 10V, ID = 4.5A N-Ch 14 VDS = -5V, ID = -3.5A P-Ch 9 N-Channel N-Ch 650 VDS = 25 V, VGS = 0 V,f = 1.0 MHz P-Ch 759 80 90 VDS = -30 V, VGS = 0 V,f = 1.0 MHz N-Ch 35 P-Ch 39 N-Channel N-Ch 11 20 VDD = 30 V, ID = 1 A, P-Ch 7 14 N-Ch 8 18 P-Ch 10 20 pF pF P-Channel N-Ch 19 35 VDD = -30 V, ID = -1 A, P-Ch 19 34 N-Ch 6 15 P-Ch 12 22 (Note 2) N-Channel N-Ch 12.5 18 VDS =30V,ID=4.5A,VGS=10V P-Ch 15 21 (Note 2) N-Ch 2.4 P-Channel P-Ch 2.5 VDS=-30V,ID=-3.5A,VGS=-10V N-Ch 2.6 (Note 2) P-Ch 3.0 [email protected] 4008-318-123 m pF P-Ch VGS = -10 V, RGEN = 6 V S N-Ch (Note 2) nA A P-Channel VGS = 10 V, RGEN = 6 A mV/ VGS = -4.5 V, ID =-3.1A On-State Drain Current mV/ N-Ch ID = -250 RDS(on) V N-Ch VGS = 10 V, ID =4.5A Static Drain-Source On-Resistance Typ VDS = 48V, VGS = 0 V ID = 250 Gate Threshold Voltage Temperature Coefficient A A, Referenced to 25 ID = -250 Zero Gate Voltage Drain Current A Min ns ns ns ns nC nC nC 2 of 3 Transistors IC IC SMD Type Product specification KDS4559 Electrical Characteristics Ta = 25 Parameter Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage http://www.twtysemi.com Testconditons Symbol IS VSD Min Typ Max N-Ch 1.3 P-Ch -1.3 VGS = 0 V, IS = 1.3A (Not 2) N-Ch 0.8 1.2 VGS = 0 V, IS = -1.3A (Not 2) P-Ch -0.8 -1.2 [email protected] 4008-318-123 Unit A V 3 of 3