TYSEMI KDS4559

Transistors
IC
IC
SMD Type
Product specification
KDS4559
Features
N-Channel
4.5 A, 60 V
RDS(ON) = 55m
RDS(ON) = 75m
@ VGS = 10 V
@ VGS =4.5V
P-Channel
-3.5 A, -60 V RDS(ON) = 105 m
RDS(ON) = 135 m
@ VGS =- 10 V
@ VGS =-4.5V
Absolute Maximum Ratings Ta = 25
Symbol
N-Channel
P- Channel
Unit
Drain to Source Voltage
Parameter
VDSS
60
-60
V
Gate to Source Voltage
VGS
20
V
Drain Current Continuous (Note 1a)
ID
Drain Current Pulsed
Power Dissipation for Single Operation
PD
PD
-3.5
A
20
-20
A
2
W
1.2
W
1
(Note 1c)
Operating and Storage Temperature
4.5
1.6
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
20
TJ, TSTG
-55 to 175
Thermal Resistance Junction to Ambient (Note 1a)
R
JA
78
/W
Thermal Resistance Junction to Case
R
JC
40
/W
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(Note 1)
[email protected]
4008-318-123
1 of 3
Transistors
IC
IC
SMD Type
Product specification
KDS4559
Electrical Characteristics Ta = 25
Parameter
Symbol
Single Pulse Drain-Source Avalanche Energy
W DSS
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Testconditons
VDD = 30 V, ID = 4.5 A
IAR
BVDSS
VGS = 0 V, ID = 250
VGS = 0 V, ID = -250
ID = 250
Breakdown Voltage Temperature Coefficient
IDSS
Gate-Body Leakage
IGSS
Gate Threshold Voltage
VGS(th)
A, Referenced to 25
Max
Unit
N-Ch
90
mJ
N-Ch
4.5
A
N-Ch
60
P-Ch
-60
58
P-Ch
-49
Static Drain-Source On-Resistance
RDS(on)
1
VDS = -48 V, VGS = 0 V
P-Ch
-1
VGS =
20V, VDS = 0 V
N-Ch
100
VGS =
20 V, VDS = 0 V
P-Ch
100
VDS = VGS, ID = 250
A
VDS = VGS, ID = -250
A
A, Referenced to 25
A, Referenced to 25
N-Ch
1
2.2
3
P-Ch
-1
-1.6
-3
N-Ch
-5.5
P-Ch
4
VGS = 10 V, ID = 4.5 A,TJ = 125
42
55
N-Ch
72
94
VGS = 4.5 V, ID =4 A
55
75
VGS = -10 V, ID =-3.5 A
82
105
VGS = -10 V, ID =-3.5 A,TJ = 125
Forward Transconductance
ID(on)
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
P-Ch
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
http://www.twtysemi.com
Qgd
130
190
105
135
VGS = 10 V, VDS = 5V
N-Ch
20
VGS = -10 V, VDS = -5V
P-Ch
-20
VDS = 10V, ID = 4.5A
N-Ch
14
VDS = -5V, ID = -3.5A
P-Ch
9
N-Channel
N-Ch
650
VDS = 25 V, VGS = 0 V,f = 1.0 MHz
P-Ch
759
80
90
VDS = -30 V, VGS = 0 V,f = 1.0 MHz
N-Ch
35
P-Ch
39
N-Channel
N-Ch
11
20
VDD = 30 V, ID = 1 A,
P-Ch
7
14
N-Ch
8
18
P-Ch
10
20
pF
pF
P-Channel
N-Ch
19
35
VDD = -30 V, ID = -1 A,
P-Ch
19
34
N-Ch
6
15
P-Ch
12
22
(Note 2)
N-Channel
N-Ch
12.5
18
VDS =30V,ID=4.5A,VGS=10V
P-Ch
15
21
(Note 2)
N-Ch
2.4
P-Channel
P-Ch
2.5
VDS=-30V,ID=-3.5A,VGS=-10V
N-Ch
2.6
(Note 2)
P-Ch
3.0
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4008-318-123
m
pF
P-Ch
VGS = -10 V, RGEN = 6
V
S
N-Ch
(Note 2)
nA
A
P-Channel
VGS = 10 V, RGEN = 6
A
mV/
VGS = -4.5 V, ID =-3.1A
On-State Drain Current
mV/
N-Ch
ID = -250
RDS(on)
V
N-Ch
VGS = 10 V, ID =4.5A
Static Drain-Source On-Resistance
Typ
VDS = 48V, VGS = 0 V
ID = 250
Gate Threshold Voltage Temperature
Coefficient
A
A, Referenced to 25
ID = -250
Zero Gate Voltage Drain Current
A
Min
ns
ns
ns
ns
nC
nC
nC
2 of 3
Transistors
IC
IC
SMD Type
Product specification
KDS4559
Electrical Characteristics Ta = 25
Parameter
Maximum Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
http://www.twtysemi.com
Testconditons
Symbol
IS
VSD
Min
Typ
Max
N-Ch
1.3
P-Ch
-1.3
VGS = 0 V, IS = 1.3A (Not 2)
N-Ch
0.8
1.2
VGS = 0 V, IS = -1.3A (Not 2)
P-Ch
-0.8
-1.2
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4008-318-123
Unit
A
V
3 of 3