IC IC SMD Type Product specification KDS6910 Features 7.5 A, 30 V. RDS(ON) = 13m @ VGS = 10 V RDS(ON) = 17m @ VGS =4.5V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGS Drain Current Continuous (Note 1a) 20 V 7.5 A Drain Current Pulsed 20 A Power Dissipation for Single Operation (Note 1a) 1.6 ID Power Dissipation for Single Operation (Note 1b) PD 1 TJ, TSTG -55 to 175 Power Dissipation for Single Operation (Note 1c) Operating and Storage Temperature W 0.9 Thermal Resistance Junction to Case (Note 1) R JC 40 /W Thermal Resistance Junction to Ambient (Note 1a) R JA 78 /W http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KDS6910 Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient Testconditons VGS = 0 V, ID = 250 ID = 250 Min Typ Max 30 A Unit V 28 A, Referenced to 25 mV/ VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V,TJ = 55 10 IGSSF VGS = 20 V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = -20 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 3 V IDSS Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate Threshold Voltage Temperature Coefficient ID = 250 Static Drain-Source On-Resistance RDS(on) 1 A -4.7 A, Referenced to 25 10.6 13 VGS = 4.5 V, ID = 6.5 A 13 17 14.5 20 ID(on) VGS = 10 V, VDS = 5V Forward Transconductance gFS VDS = 5 V, ID = 7.5A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance RG mV/ VGS = 10 V, ID =7.5 A VGS = 10 V, ID =7.5 A,TJ = 125 On-State Drain Current 1.8 20 VDS = 15 V, VGS = 0 V,f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz A m A 36 S 1130 pF 300 pF 100 pF 2.4 Turn-On Delay Time td(on) 9 18 ns Turn-On Rise Time tr 5 10 ns Turn-Off Delay Time td(off) 26 42 ns tf 7 14 ns Qg(TOT) 17 24 nC 9 13 nC Turn-Off Fall Time Total Gate Charge at Vgs=10V Total Gate Charge Vgs=5V Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VDD = 15 V, ID = 1 A,VGS = 10 V, RGEN = 6 VDS = 15 V, ID = 7.5 A(Note 2) nC 2.7 nC IS VSD 1.3 VGS = 0 V, IS = 1.3 A (Not 2) Diode Reverse Recovery Time trr IF =7.5A Diode Reverse Recovery Charge Qrr diF/dt = 100 A/ http://www.twtysemi.com 3.1 [email protected] 1.2 s 4008-318-123 A V 24 nS 13 nC 2 of 2