Transistors IC SMD Type Product specification KDS8333C Features N-Channel 4.1 A, 30 V RDS(ON) = 80m RDS(ON) = 130m @ VGS = 10 V @ VGS =4.5V P-Channel -3.4 A, 30 V RDS(ON) = 130 m RDS(ON) = 200 m @ VGS =- 10 V @ VGS =-4.5V Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package. Absolute Maximum Ratings Ta = 25 Symbol N-Channel P- Channel Unit Drain to Source Voltage Parameter VDSS 30 -60 V Gate to Source Voltage VGS 20 V Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power Dissipation for Single Operation PD PD -3.4 A 20 -20 A 2 W 1 W 0.9 (Note 1c) Operating and Storage Temperature 4.1 1.6 Power Dissipation for Single Operation (Note 1a) (Note 1b) 16 TJ, TSTG -55 to 150 Thermal Resistance Junction to Ambient (Note 1a) R JA 78 /W Thermal Resistance Junction to Case R JC 40 /W http://www.twtysemi.com (Note 1) [email protected] 4008-318-123 1 of 3 Transistors IC SMD Type Product specification KDS8333C Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 IDSS Gate-Body Leakage IGSS VGS(th) A, Referenced to 25 Min N-Ch 30 P-Ch -30 Typ N-Ch 25 P-Ch -22 N-Ch 1 P-Ch -1 VGS = 16V, VDS = 0 V N-Ch 100 VGS = 20 V, VDS = 0 V P-Ch 100 A VDS = VGS, ID = -250 ID = -250 Static Drain-Source On-Resistance RDS(on) RDS(on) A A, Referenced to 25 A, Referenced to 25 N-Ch 1 1.7 3 P-Ch -1 -1.8 -3 N-Ch -4.2 P-Ch 3.7 67 N-Ch 81 130 145 VGS = -10 V, ID =-3.4A 105 130 167 200 147 220 VGS = -10 V, ID =-3.4 A,TJ = 125 P-Ch ID(on) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Gate Resistance Crss RG Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge http://www.twtysemi.com Qgd VGS = 10 V, VDS = 5V N-Ch 10 VGS = -10 V, VDS = -5V P-Ch -5 VDS = 5V, ID = 4.1A N-Ch 9 VDS = -5V, ID = -3.4A P-Ch 5 N-Channel N-Ch 282 VDS = 10 V, VGS = 0 V,f = 1.0 MHz P-Ch 185 pF 49 P-Channel 56 VDS = -10 V, VGS = 0 V,f = 1.0 MHz N-Ch 20 P-Ch 26 N-Ch 2.3 VGS=-15 mV, f=1.0MHz P-Ch -9.6 N-Channel N-Ch 4.5 9 VDD = 10 V, ID = 1 A, P-Ch 4.5 9 N-Ch 6 12 P-Ch 13 23 (Note 2) pF pF P-Channel N-Ch 19 34 VDD = -10 V, ID = -1 A, P-Ch 11 20 N-Ch 1.5 3 P-Ch 2 4 VGS = -4.5 V, RGEN = 6 (Note 2) N-Channel N-Ch 4.7 6.6 VDS =10V,ID=4.1A,VGS=4.5V P-Ch 4.1 5.7 RGEN = 6 N-Ch 0.9 P-Channel P-Ch 0.8 VDS=-10V,ID=-3.4A,VGS=-4.5V(Note 2) N-Ch 0.6 P-Ch 0.4 (Note 2) [email protected] m S P-Ch VGS = 4.5 V, RGEN = 6 V A N-Ch VGS= 15 mV, f=1.0MHz nA 80 103 VGS = 10 V, ID = 4.1 A,TJ = 125 A mV/ VGS = 4.5 V, ID =3.2 A VGS = -4.5 V, ID =-2.5A On-State Drain Current mV/ VDS = 24V, VGS = 0 V VDS = VGS, ID = 250 Unit V VGS = 10 V, ID =4.1A Static Drain-Source On-Resistance Max VDS = -24 V, VGS = 0 V ID = 250 Gate Threshold Voltage Temperature Coefficient A A, Referenced to 25 ID = -250 Zero Gate Voltage Drain Current A VGS = 0 V, ID = -250 ID = 250 Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Testconditons Symbol 4008-318-123 ns ns ns ns nC nC nC 2 of 3 Transistors IC SMD Type Product specification KDS8333C Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Diode Forward Voltage VSD Diode Reverse Recovery Time trr Diode Reverse Recovery Charge Qrr http://www.twtysemi.com Testconditons Min Typ Max VGS = 0 V, IS = 1.3A (Not 2) N-Ch 0.8 1.2 VGS = 0 V, IS = -1.3A (Not 2) P-Ch 0.8 -1.2 IF = 4.1 A, diF/dt = 100 A/ N-Ch 16.3 P-Ch 14.5 IF = -3.4 A, diF/dt = 100 A/ IF = 4.1 A, diF/dt = 100 A/ IF = -3.4 A, diF/dt = 100 A/ [email protected] s s s s N-Ch 26.7 P-Ch 21.1 4008-318-123 Unit V nS nC 3 of 3