Transistors IC SMD Type Product specification KI4501ADY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70 Pulsed Drain Current Maximum Power Dissipation* TA = 25 IS PD TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t Steady State 10 sec 30 Unit Steady State -8 20 V 8 V 8.8 6.3 -5.7 -4.1 A 7 5.2 -4.5 -3.3 A 30 IDM Continuous Source Current (Diode Conduction)* P-Channel -30 A 1.8 1 -1.8 1 A 2.5 1.3 2.5 1.3 W 1.6 0.84 1.6 0.84 W -55 to 150 TJ, Tstg 10 sec. Thermal Resistance Ratings TA = 25 Parameter Symbol N-Channel Typ Maximum Junction-to-Ambient* t 10 sec RthJA Steady State Maximum Junction-to-Foot Steady State RthJc Max P-Channel Typ Unit Max 40 50 42 50 75 95 76 95 18 23 21 26 /W *Surface Mounted on FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KI4501ADY Electrical Characteristics Ta = 25 Parameter VGS( th) Gate Threshold Voltage IGSS Gate Body Leakage Zero Gate Voltage Drain Current IDSS ID(on) On State Drain Currenta Drain Source On State Resistance* rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd td(on) Turn On Time Rise Time tr Turn Off Delay Time td( off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width Testconditons Symbol Min Typ Max VDS = VGS, ID = 250 A N-Ch 0.8 1.8 VDS = VGS, ID = -250 P-Ch -0.45 1.0 A VDS = 0 V VGS = 20 V N-Ch 100 VDS = 0 V VGS = 8 V P-Ch 100 VDS = 30V, VGS = 0 V N-Ch 1 VDS = -8V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 N-Ch 5 VDS = -8V, VGS = 0 V, TJ = 55 P-Ch -5 VDS =5 V, VGS = 10 V N-Ch 30 VDS =-5 V, VGS = -4.5 V P-Ch -20 VGS = 10 V, ID = 8.8A N-Ch 0.015 0.018 P-Ch 0.030 0.042 VGS = 4.5 V, ID = 7.0A N-Ch 0.022 0.027 VGS = -2.5 V, ID = -4.8A P-Ch 0.048 0.060 VDS = 15 V, ID = 8.8A N-Ch 18 VDS = -15 V, ID = -5.7A P-Ch 12 IS = 1.8A, VGS = 0 V N-Ch 0.73 1.1 IS = -1.8A, VGS = 0 V P-Ch -0.75 - 1.1 N-Channel N-Ch 11.5 20 VDS = 15 V, VGS = 5V, ID = 8.8A P-Ch 13.5 20 nA A S N-Ch 3 P-Channel P-Ch 2.2 VDS = -4 V, VGS = -5 V, ID = -5.7A N-Ch 4 P-Ch 3 N Channel N-Ch 15 VDD = 15 V, RL = 15 P-Ch 21 40 ID= 1A, VGEN = 10V, Rg = 6 N-Ch 8 15 P-Ch 45 70 P-Channel N-Ch 35 50 VDD = -4 V, RL = 4 P-Ch 60 100 ID= -1 A, VGEN = -4.5 V, Rg = 6 N-Ch 10 20 P-Ch 55 85 s V A VGS = -4.5 V, ID = -5.7A IF = 1.8 A, di/dt = 100 A/ Unit V nC 22 N-Ch 30 60 P-Ch 50 100 ns 300 s, duty cycle 2%. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2