IC IC MOSFET SMD Type Product specification KI5404BDC Features TrenchFET Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID 5 secs Steady State 20 V 12 7.5 5.4 TA = 70 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * IS TA = 25 PD TA = 70 Operating Junction and Storage Temperature Range 2.1 1.1 2.5 1.3 1.3 0.7 260 Parameter Symbol t 5 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) W -55 to 150 TJ, Tstg Soldering Recommendations (Peak Temperature) Maximum Junction-to-Ambienta A 20 IDM Unit Steady-State RthJF Typ Max 45 50 80 95 18 22 Unit /W * Surface Mounted on 1" X 1' FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1of 2 IC IC MOSFET SMD Type Product specification KI5404BDC Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current* ID(on) Drain-Source On-State Resistance* rDS(on) Testconditons VDS = VGS, ID = 250 ìA VDS = 0 V, VGS = Min Typ 0.6 12 V Max Unit 1.5 V 100 nA VDS = 20 V, VGS = 0 V 1 A VDS = 20 V, VGS = 0 V, TJ = 85 5 A VDS 20 5 V, VGS = 4.5 V A VGS = 4.5 V, ID = 5.4 A 0.022 0.028 VGS = 2.5 V, ID = 2.6 A 0.031 0.039 Forward Transconductance* gfs VDS = 10 V, ID = 5.4 A 26 S Schottky Diode Forward Voltage* VSD IS = 1.1 A, VGS = 0 V 0.7 V Total Gate Charge Qg 7 nC Gate-Source Charge Qgs 1.7 nC Gate-Drain Charge Qgd 2 nC Gate Resistance Rg 1.7 Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width VDS = 10 V, VGS = 4.5 V, ID = 5.4 A 11 300 s, duty cycle http://www.twtysemi.com 12 20 ns VDD = 10 V, RL = 10 12 20 ns ID = 1 A, VGEN = 4.5V, RG = 6 25 40 ns 10 20 ns 20 40 ns IF = 1.1 A, di/dt = 100 A/ s 2%. [email protected] 4008-318-123 2 of 2