Diodes IC Transistors Transistor T SMD Type Product specification KTA1666 SOT-89 ■ Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 ● Collector Power dissipation: PC=500mW +0.1 2.50-0.1 ● Collector Current -Continuous: IC=-2A 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 -0.1 2.60 +0.1 -0.1 +0.1 0.80-0.1 2 1 +0.1 0.48-0.1 +0.1 4.00-0.1 +0.1 1.80-0.1 1. Source Base 1 1. Base 2 2. Collector 2. Drain Collector 3 Emitter 3. Emiitter 0.40 +0.1 3.00-0.1 3. Gate ■ Absolute Maximum Ratings Ta = 25℃ Parameter 1 Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -2 A Collector Power dissipation PC 500 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Collector-base breakdown voltage V(BR)CBO IC=-1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -50 V Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -5.0 V Collector cut-off current Collector cut-off current DC current gain ICBO VCB= -50 V , IE=0 -50 Unit ICEO VCE= -5 V , IB=0 hFE1 VCE=-2V, IC= -0.5A 70 hFE2 VCE=-2V, IC= -1.5A 40 V -0.1 μA -0.1 μA 240 Collector-emitter saturation voltage VCE(sat) IC=-1A, IB= 50mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -1A, IB= 50mA -1.2 V Transition frequency fT Collector Output Capacitance Cob VCE= -2V, IC=-0.5A 120 MHz VCB=-10V, IE=0, f=1MHz 40 pF ■ hFE Classification Marking WO WY Rank O Y Range 70～140 120 ～240 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1