Diodes IC Transistors Transistor T SMD Type Product specification KTA1664 SOT-89 ■ Features Unit: mm +0.1 4.50-0.1 ● Collector Power Dissipation: PC=500mW +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 0.40 +0.1 -0.1 2.60 +0.1 -0.1 +0.1 0.80-0.1 1 +0.1 0.48-0.1 +0.1 4.00-0.1 ● Collector Current:IC=-800mA +0.1 3.00-0.1 1. Source Base 1 1. Base 2 2. Collector 2. Drain Collector 3 Emitter 3. Emiitter 3. Gate ■ Absolute Maximum Ratings Ta = 25℃ Parameter 1 Symbol Rating Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Base Current IB -160 mA Collector Power Dissipation Junction Temperature Storage Temperature Range PC 500 mW PC* 1 W Tj 150 ℃ Tstg -55 to 150 ℃ *KTA1664 mounted on ceramic substrate (250mm2x0.8t) http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Diodes IC Transistors Transistor T SMD Type Product specification KTA1664 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA, IE=0 -35 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -30 V Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -5.0 V Collector Cut-off Current ICBO VCB=-35V, IE=0 -100 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 -100 nA DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Voltage Transition Frequency Collector Output Capacitance VCE=-1V, IC=-100mA 100 VCE=-1V, IC=-700mA 35 320 IC=-500mA, IB=-20mA V -0.8 V VBE VCE=-1V, IC=-10mA fT VCE=-5V, IC=-10mA 120 MHz VCB=-10V, IE=0, f=1MHz 19 pF Cob -0.5 -0.7 ■ hFE Classification Marking RO RY Rank O Y Range 100～200 http://www.twtysemi.com 160 ～320 [email protected] 4008-318-123 2 of 2