Diodes IC Transistors Transistor T SMD Type Product specification KTC3880 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ■ Features 0.4 3 1 0.55 ● Collector Current: IC=20mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=150mW 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage Parameter VCBO 40 V Collector-Emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector Current IC 20 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 ℃ Tstg -55 to 150 ℃ Storage Temperature Range ■ Electrical Characteristics Ta = 25℃ Symbol Test conditons Min Collector-base breakdown voltage Parameter V(BR)CBO IC=100μA, IE=0 40 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 30 Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 4 Typ Max Unit Collector Cut-off Current ICBO VCB=18V, IE=0 0.5 μA Emitter Cut-off Current IEBO VEB=4V, IC=0 0.5 μA DC Current Gain hFE VCE=6V, IC=1mA fT VCE=6V, IC=1mA Transition Frequency Collector output capacitance Cob Collector-Base Time Constant Noise Figure VCB=6V, IE=0, f=1MHz 40 200 500 MHz 1 pF Cc.rbb VCE=6V,IE=-1mA,f=30MHz 30 ps NF VCE=6V,IC=1mA,f=100MHz 5.0 dB ■ hFE Classification Marking AQR AQO AQY Rank R O Y hFE 40～80 70～140 100～200 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1