Transistors Diodes IC Transistor T SMD Type Product specification KTC4378 SOT-89 ■ Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 ● Collector Power Dissipation: PC=500mW 2.50±0.1 4.00±0.1 ● Collector Current: IC=1A 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1 2 2.60±0.1 1 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-Emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V Collector Current IC 1 A Collector Power Dissipation PC 500 mW Junction Temperature Tj 150 ℃ Tstg -55 to 150 ℃ Storage Temperature Range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 80 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 60 V Emitter-Base Breakdown Voltage 5 V(BR)EBO IE=1mA, IC=0 Collector Cut-off Current ICBO VCB=50V, IE=0 100 nA Emitter Cut-off Current IEBO VEB=4V, IC=0 100 nA DC Current Gain hFE VCE=2V, IC=50mA 100 VCE=2V, IC=1A 30 V 320 Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA fT VCE=10V, IC=50mA 150 MHz VCB=10V, IE=0, f=1MHz 12 pF Transition frequency Collector Output Capacitance Cob 0.5 1.2 V V ■ hFE Classification Marking TY TGR Rank Y GR Range 100～200 160 ～320 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1