Transistors IC SMD Type Product specification 2SD1220 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Power Amplifier Applications 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 6 V IC 1.5 A IB 1 A Collector current Base current Collector power dissipation Ta = 25 PC 1 W 10 Tc = 25 Junction temperature Storage temperature range Tj 150 Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB = 150 V, IE = 0 1.0 ìA Emitter cut-off current IEBO VEB = 6 V, IC = 0 1.0 ìA V (BR) CEO IC = 10 mA, IB = 0 150 VCE = 5 V, IC = 200 mA 60 Collector-emitter breakdown voltage DC current gain hFE Collector-emitter saturation voltage VCE (sat) Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob Testconditons Min Typ V 320 IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 5 mA 0.5 VCE = 5 V, IC = 200 mA 20 VCB = 10 V, IE = 0, f = 1 MHz 1.5 V 0.8 V 100 13 MHz 20 pF hFE Classification D1220 Marking Rank R O Y hFE 60 to 120 100 to 200 160 to 320 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1