Product specification KTD1302 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 ■ Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=300mA 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1 2 2.60±0.1 1 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-Emitter voltage VCEO 25 V Emitter-base voltage VEBO 12 V Collector Current IC 300 mA Collector Power Dissipation PC 500 mW Junction Temperature Tj 150 ℃ Tstg -55 to 150 ℃ Storage Temperature Range ■ Electrical Characteristics Ta = 25℃ Max Unit Collector Cut-off Current Parameter Symbol ICBO VCB=25V, IE=0 Test conditons 100 nA Emitter Cut-off Current IEBO VEB=12V, IC=0 100 nA DC Current Gain hFE VCE=2V, IC=4mA 200 VCE=2V, IC=4mA 20 Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA Transition frequency fT Collector Output Capacitance Cob Min Typ 800 0.25 1.0 V V VCE=10V, IC=1mA 60 MHz VCB=10V, IE=0, f=1MHz 10 pF ■ Marking Marking BJ http://www.twtysemi.com [email protected] 4008-318-123 1 of 1