Product specification PZTA56 SOT-223 ■ Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● Collector current (DC)：IC=500mA +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power dissipation：PC=1W +0.2 0.90-0.2 +0.1 3.00-0.1 ● Complementary NPN Type Available (PZTA06) +0.3 7.00-0.3 4 1 Base 2 Collector 1 3 2 3 Emitter +0.1 -0.1 0.70 2.9 4 Collector 4.6 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -4.0 V Collector Current -Continuous IC -500 mA Collector Power Dissipation PD 1 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector-to-base breakdown voltage V(BR)CBO Ic= -100 μA,IE=0 -80 V Collector-to-emitter breakdown voltage V(BR)CEO Ic= -1 mA， IB=0 -80 V Emitter-to-base breakdown voltage V(BR)EBO IE= -100 μA， IC=0 -4.0 V Collector cutoff current IcBO VCB= -80 V , IE=0 -100 nA Emitter cut-off current IEBO VCE= -4V , IC=0 -100 nA DC current gain hFE VCE= -1.0V, IC= -10mA 100 VCE= -10V, IC= -100mA 100 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.25 V Base-Emitter On Voltage VBE(on) IC=-100 mA, VCE=-1.0V -1.2 V Transition frequency fT VCE= -1.0V, IC= -100mA,f=100MHz 50 MHz ■ Marking Marking A56 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1