TYSEMI KTHC5513

Transistors
IC
IC
SMD Type
Product specification
KTHC5513
Features
Complementary N-Channel and P-Channel MOSFET
Leadless SMD Package Featuring Complementary Pair
Low RDS(on) in a ChipFET Package for High Efficiency Performance
Low Profile (
1.10 mm) Allows Placement in Extremely Thin
Environments Such as Portable Electronics
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-source voltage
ID
TA = 85
t
5
IDM
Drain current Pulsed t = 10 s *1
Total power dissipation
t
-2.2
2.1
-1.6
3.9
-3
12
-9
5
Operating and Storage Temperature Range
Lead Temperature for Soldering Purposes
Steady State
t
A
A
1.1
W
2.1
W
TJ, Tstg
-55 to 150
TL
260
R
V
2.9
PD
Unit
V
12
VGSS
Drain current Continuous *1 TA = 25
P-Channel
20
VDSS
Gate-source voltage
Junction-to-Ambient *1
N-Channel
110
JA
5
60
/W
*1 Surface Mounted on FR4 board using 1 in sq pad size
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 3
IC
Transistors
IC
SMD Type
Product specification
KTHC5513
Electrical Characteristics Ta = 25
Parameter
Drain-source breakdown voltage
Testconditons
Symbol
V(BR) DSS
ID=250 A,VGS=0V
N-Ch
20
ID=-250 A,VGS=0V
P-Ch
-20
VDS=16V,VGS=0V
Zero gate voltage drain current
IDSS
VDS=16V,VGS=0V,TJ = 85
VDS=-16V,VGS=0V
VDS=-16V,VGS=0V,TJ = 85
Gate?to?Source Leakage Current
IGSS
Gate threshold voltage *1
VGS (th)
Static drain-source on-state
resistance *1
RDS (on)
Static drain-source on-state
resistance *1
RDS (on)
Forward Transconductance
gFS
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total Gate Charge
QG(TOT)
Gate?to?Source Gate Charge
QGS
Gate?to?Drain "Miller" Charge
QGD
Turn-on delay time
td (on)
Rise time
Turn-off delay time *1
Fall time *1
Forward Voltage *1
http://www.twtysemi.com
tr
td (off)
tf
VSD
Min
VDS = 0 V, VGS =
12 V
Typ
Max
V
1
N-Ch
5
-1
P-Ch
100
P-Ch
100
N-Ch
0.6
1.2
VDS = VGS, ID = -250 A
P-Ch
-0.6
-1.2
N-Ch
ID=2.3A,VGS=2.5V
ID=-2.2A,VGS=-4.5V
P-Ch
ID=-1.7A,VGS=-2.5V
0.058
0.13
N-Ch
6.0
P-Ch
6.0
N-Channel
N-Ch
180
VDS=10V,VGS=0V,f=1MHz
P-Ch
185
N-Ch
80
P-Channel
P-Ch
95
VDS=-10V,VGS=0V,f=1MHz
N-Ch
25
P-Ch
30
0.08
0.155
S
pF
pF
pF
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
N-Ch
2.6
4.0
VGS =-4.5 V, VDS = -10 V, ID =-2.2 A
P-Ch
3.0
6.0
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
N-Ch
0.6
VGS =-4.5 V, VDS =-10 V, ID =-2.2 A
P-Ch
0.5
nC
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
N-Ch
0.7
VGS =-4.5 V, VDS =-10 V, ID =-2.2 A
P-Ch
0.9
ID=2.9A,VDD=16V
N-Ch
5.0
10
ID=-2.2A,VDD=-16V
P-Ch
7.0
12
N-Channel
N-Ch
9
18
VGS=4.5V,RG=2.5 *2
P-Ch
13
25
N-Ch
10
20
P-Ch
33
50
N-Ch
3.0
6.0
P-Ch
27
40
IS=2.6 A,VGS=0V
N-Ch
0.8
1.15
IS=-2.1 A,VGS=0 V
P-Ch
-0.8
-1.15
[email protected]
*2
V
0.200 0.240
ID=-2.2A,VDS=-10V
VGS=-4.5V,,RG=2.5
nA
0.077 0.115
ID=2.9A,VDS=10V
P-Channel
A
-5
N-Ch
VDS = VGS, ID = 250 A
ID=2.9A,VGS=4.5A
Unit
4008-318-123
ns
ns
ns
ns
V
2 of 3
IC
Transistors
IC
SMD Type
Product specification
KTHC5513
Electrical Characteristics Ta = 25
Parameter
Testconditons
Symbol
trr
N-Channel
Reverse Recovery Time
ta
tb
VGS = 0 V,dIS/dt = 100 A/
P-Channel
VGS = 0 V,dIS/dt = 100 A/
Reverse Recovery Storage Charge
*1 Pulse Test: Pulse Width
250
s,IS=1.5 A
s,IS=?1.5A
QRR
s, Duty Cycle
Min
Typ
N-Ch
12.5
P-Ch
32
N-Ch
9
P-Ch
10
N-Ch
3.5
P-Ch
22
N-Ch
6
P-Ch
15
Max
Unit
ns
C
2%.
*2 Switching characteristics are independent of operating junction temperature.
http://www.twtysemi.com
[email protected]
4008-318-123
3 of 3