TYSEMI KPA1792

Transistors
IC
IC
SMD Type
Product specification
KPA1792
Features
Low on-state resistance
N-channel RDS(on)1 = 26 m
MAX. (VGS = 10 V, ID = 3.4 A)
RDS(on)2 = 36 m
MAX. (VGS = 4.5 V, ID = 3.4 A)
RDS(on)3 = 42 m
MAX. (VGS = 4.0 V, ID = 3.4 A)
P-channel RDS(on)1 = 36 m
MAX. (VGS = -10 V, ID = -2.9 A)
RDS(on)2 = 54 m
MAX. (VGS = -4.5 V, ID = -2.9 A)
RDS(on)3 = 65 m
MAX. (VGS = -4.0 V, ID = -2.9 A)
Low input capacitance
N-channel Ciss = 760 pF TYP.
P-channel Ciss = 900 pF TYP.
Built-in gate protection diode
Small and surface mount package
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P- Channel
30
-30
Unit
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
20
20
V
Drain Current (DC)
ID(DC)
6.8
5.8
A
ID(pulse)
27.2
Drain Current (pulse) *1
23.2
V
A
Total Power Dissipation (1 unit) *2
PT
1.7
W
Total Power Dissipation (2 units) *2
PT
2
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to +150
*1 PW
10
s, Duty Cycle
1%
*2 Mounted on ceramic substrate of 2000 mm2 X 1.6 mm
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
IC
Transistors
IC
SMD Type
Product specification
KPA1792
Electrical Characteristics Ta = 25
Parameter
Zero Gate Voltage Drain Current
IDSS
Gate Leakage Current
IGSS
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
VGS(off)
| yfs |
-1
VGS =
16 V, VDS = 0 V
N-Ch
10
VGS =
16 V, VDS = 0 V
P- Ch
10
VDS = 10 V, ID = 1 mA
N-Ch
1.5
2.1
2.5
VDS = -10 V, ID = -1 mA
P- Ch
-1.5
-2.0
-2.5
VDS = 10 V, ID = 3.4 A
N-Ch
3.0
7.5
VDS = -10 V, ID = -2.9A
P- Ch
3.5
8.0
RDS(on)3
A
A
V
S
26
m
27
36
m
VGS = 4.0 V, ID = 3.4A
31
42
m
RDS(on)1
VGS = -10 V, ID = -2.9 A
30
36
m
RDS(on)2
VGS = -4.5 V, ID = -2.9 A
P- Ch
43
54
m
RDS(on)3
VGS = -4.0 V, ID = -2.9 A
49
65
m
N-Channel
N-Ch
760
VDS = 10 V,VGS = 0 V,f = 1 MHz
P- Ch
900
N-Ch
250
P- Ch
300
Crss
Turn-on Delay Time
td(on)
tr
td(off)
tf
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
VF(S-D)
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
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P- Ch
Unit
20.5
Reverse Transfer Capacitance
Body Diode Forward Voltage Note
VDS = -30V, VGS = 0 V
VGS = 4.5 V, ID = 3.4 A
Coss
Total Gate Charge
Max
10
VGS = 10 V, ID = 3.4 A
Output Capacitance
Fall Time
Typ
N-Ch
RDS(on)2
Ciss
Turn-off Delay Time
Min
VDS = 30 V, VGS = 0 V
RDS(on)1
Input Capacitance
Rise Time
Testconditons
Symbol
N-Ch
P- Channel
VDS = -10 V,VGS = 0 V,f = 1 MHz
N-Ch
95
P- Ch
120
N-Channel
N-Ch
20
VDD = 15 V, ID = 3.4 A,VGS = 10 V
P- Ch
23
RG = 10
N-Ch
140
P- Ch
220
P- Channel
N-Ch
50
VDD = -15 V, ID = -2.9 A,VGS = -10 V
P- Ch
90
RG = 10
N-Ch
30
P- Ch
70
N-Channel
N-Ch
14
ID = 6.8 A,VDD = 24 V,VGS = 10 V
P- Ch
17
N-Ch
2
P- Channel
P- Ch
2.5
ID = -5.8 A,VDD = -24 V,VGS = -10 V
N-Ch
5
P- Ch
4.0
IF = 6.8 A, VGS = 0 V
N-Ch
0.86
IF = 5.8 A, VGS = 0 V
P- Ch
0.85
N-Channel
N-Ch
30
s
P- Ch
40
N-Ch
20
s
P- Ch
30
IF = 6.8A, VGS = 0 V,di/dt = 100 A/
P-Channel
IF = 5.8A, VGS = 0 V,di/dt = 100 A/
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4008-318-123
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
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