Transistors IC IC SMD Type Product specification KPA1792 Features Low on-state resistance N-channel RDS(on)1 = 26 m MAX. (VGS = 10 V, ID = 3.4 A) RDS(on)2 = 36 m MAX. (VGS = 4.5 V, ID = 3.4 A) RDS(on)3 = 42 m MAX. (VGS = 4.0 V, ID = 3.4 A) P-channel RDS(on)1 = 36 m MAX. (VGS = -10 V, ID = -2.9 A) RDS(on)2 = 54 m MAX. (VGS = -4.5 V, ID = -2.9 A) RDS(on)3 = 65 m MAX. (VGS = -4.0 V, ID = -2.9 A) Low input capacitance N-channel Ciss = 760 pF TYP. P-channel Ciss = 900 pF TYP. Built-in gate protection diode Small and surface mount package Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel 30 -30 Unit Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS 20 20 V Drain Current (DC) ID(DC) 6.8 5.8 A ID(pulse) 27.2 Drain Current (pulse) *1 23.2 V A Total Power Dissipation (1 unit) *2 PT 1.7 W Total Power Dissipation (2 units) *2 PT 2 W Channel Temperature Tch 150 Storage Temperature Tstg -55 to +150 *1 PW 10 s, Duty Cycle 1% *2 Mounted on ceramic substrate of 2000 mm2 X 1.6 mm http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC Transistors IC SMD Type Product specification KPA1792 Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current IDSS Gate Leakage Current IGSS Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance VGS(off) | yfs | -1 VGS = 16 V, VDS = 0 V N-Ch 10 VGS = 16 V, VDS = 0 V P- Ch 10 VDS = 10 V, ID = 1 mA N-Ch 1.5 2.1 2.5 VDS = -10 V, ID = -1 mA P- Ch -1.5 -2.0 -2.5 VDS = 10 V, ID = 3.4 A N-Ch 3.0 7.5 VDS = -10 V, ID = -2.9A P- Ch 3.5 8.0 RDS(on)3 A A V S 26 m 27 36 m VGS = 4.0 V, ID = 3.4A 31 42 m RDS(on)1 VGS = -10 V, ID = -2.9 A 30 36 m RDS(on)2 VGS = -4.5 V, ID = -2.9 A P- Ch 43 54 m RDS(on)3 VGS = -4.0 V, ID = -2.9 A 49 65 m N-Channel N-Ch 760 VDS = 10 V,VGS = 0 V,f = 1 MHz P- Ch 900 N-Ch 250 P- Ch 300 Crss Turn-on Delay Time td(on) tr td(off) tf QG Gate to Source Charge QGS Gate to Drain Charge QGD VF(S-D) Reverse Recovery Time trr Reverse Recovery Charge Qrr http://www.twtysemi.com P- Ch Unit 20.5 Reverse Transfer Capacitance Body Diode Forward Voltage Note VDS = -30V, VGS = 0 V VGS = 4.5 V, ID = 3.4 A Coss Total Gate Charge Max 10 VGS = 10 V, ID = 3.4 A Output Capacitance Fall Time Typ N-Ch RDS(on)2 Ciss Turn-off Delay Time Min VDS = 30 V, VGS = 0 V RDS(on)1 Input Capacitance Rise Time Testconditons Symbol N-Ch P- Channel VDS = -10 V,VGS = 0 V,f = 1 MHz N-Ch 95 P- Ch 120 N-Channel N-Ch 20 VDD = 15 V, ID = 3.4 A,VGS = 10 V P- Ch 23 RG = 10 N-Ch 140 P- Ch 220 P- Channel N-Ch 50 VDD = -15 V, ID = -2.9 A,VGS = -10 V P- Ch 90 RG = 10 N-Ch 30 P- Ch 70 N-Channel N-Ch 14 ID = 6.8 A,VDD = 24 V,VGS = 10 V P- Ch 17 N-Ch 2 P- Channel P- Ch 2.5 ID = -5.8 A,VDD = -24 V,VGS = -10 V N-Ch 5 P- Ch 4.0 IF = 6.8 A, VGS = 0 V N-Ch 0.86 IF = 5.8 A, VGS = 0 V P- Ch 0.85 N-Channel N-Ch 30 s P- Ch 40 N-Ch 20 s P- Ch 30 IF = 6.8A, VGS = 0 V,di/dt = 100 A/ P-Channel IF = 5.8A, VGS = 0 V,di/dt = 100 A/ [email protected] 4008-318-123 pF pF pF ns ns ns ns nC nC nC V ns nC 2 of 2